| Nr. | Part Name | Description | Manufacturer by |
| 48321 | 2N6080 | V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor | SGS Thomson Microelectronics |
| 48322 | 2N6081 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48323 | 2N6081 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48324 | 2N6081 | V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor | SGS Thomson Microelectronics |
| 48325 | 2N6082 | NPN Silicon RF Power Transistors | Motorola |
| 48326 | 2N6082 | VHF Communications Transistor | ST Microelectronics |
| 48327 | 2N6082 | V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor | SGS Thomson Microelectronics |
| 48328 | 2N6083 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48329 | 2N6083 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48330 | 2N6083 | V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor | SGS Thomson Microelectronics |
| 48331 | 2N6084 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48332 | 2N6084 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48333 | 2N6084 | V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor | SGS Thomson Microelectronics |
| 48334 | 2N6099 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 48335 | 2N6101 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 48336 | 2N6101 | 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. | Continental Device India Limited |
| 48337 | 2N6103 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 48338 | 2N6106 | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | Boca Semiconductor Corporation |
| 48339 | 2N6106 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. | General Electric Solid State |
| 48340 | 2N6107 | SILICON PNP SWITCHING TRANSISTORS | ST Microelectronics |
| 48341 | 2N6107 | SILICON PNP SWITCHING TRANSISTORS | SGS Thomson Microelectronics |
| 48342 | 2N6107 | SILICON PNP SWITCHING TRANSISTORS | SGS Thomson Microelectronics |
| 48343 | 2N6107 | POWER TRANSISTORS(7A,40W) | MOSPEC Semiconductor |
| 48344 | 2N6107 | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | Boca Semiconductor Corporation |
| 48345 | 2N6107 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 48346 | 2N6107 | Power 7A 70V Discrete PNP | ON Semiconductor |
| 48347 | 2N6107 | 40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. | Continental Device India Limited |
| 48348 | 2N6107 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. | General Electric Solid State |
| 48349 | 2N6107 | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. | USHA India LTD |
| 48350 | 2N6107-D | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
| 48351 | 2N6108 | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | Boca Semiconductor Corporation |
| 48352 | 2N6108 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. | General Electric Solid State |
| 48353 | 2N6109 | POWER TRANSISTORS(7A,40W) | MOSPEC Semiconductor |
| 48354 | 2N6109 | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | Boca Semiconductor Corporation |
| 48355 | 2N6109 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 48356 | 2N6109 | Power 7A 50V Discrete PNP | ON Semiconductor |
| 48357 | 2N6109 | 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. | Continental Device India Limited |
| 48358 | 2N6109 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. | General Electric Solid State |
| 48359 | 2N6110 | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | Boca Semiconductor Corporation |
| 48360 | 2N6110 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. | General Electric Solid State |
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