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Datasheets found :: 1351361Page: << | 1204 | 1205 | 1206 | 1207 | 1208 | 1209 | 1210 | 1211 | 1212 | 1213 | 1214 | >>
Nr.Part NameDescriptionManufacturer by
483212N6080V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistorSGS Thomson Microelectronics
483222N6081RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483232N6081RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483242N6081V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistorSGS Thomson Microelectronics
483252N6082NPN Silicon RF Power TransistorsMotorola
483262N6082VHF Communications TransistorST Microelectronics
483272N6082V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistorSGS Thomson Microelectronics
483282N6083RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483292N6083RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483302N6083V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistorSGS Thomson Microelectronics
483312N6084RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483322N6084RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483332N6084V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistorSGS Thomson Microelectronics
483342N6099Leaded Power Transistor General PurposeCentral Semiconductor
483352N6101Leaded Power Transistor General PurposeCentral Semiconductor
483362N6101 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE.Continental Device India Limited
483372N6103Leaded Power Transistor General PurposeCentral Semiconductor
483382N6106EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483392N6106Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V.General Electric Solid State



483402N6107SILICON PNP SWITCHING TRANSISTORSST Microelectronics
483412N6107SILICON PNP SWITCHING TRANSISTORSSGS Thomson Microelectronics
483422N6107SILICON PNP SWITCHING TRANSISTORSSGS Thomson Microelectronics
483432N6107POWER TRANSISTORS(7A,40W)MOSPEC Semiconductor
483442N6107EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483452N6107Leaded Power Transistor General PurposeCentral Semiconductor
483462N6107Power 7A 70V Discrete PNPON Semiconductor
483472N6107 40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE.Continental Device India Limited
483482N6107Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V.General Electric Solid State
483492N6107PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W.USHA India LTD
483502N6107-DComplementary Silicon Plastic Power TransistorsON Semiconductor
483512N6108EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483522N6108Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V.General Electric Solid State
483532N6109POWER TRANSISTORS(7A,40W)MOSPEC Semiconductor
483542N6109EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483552N6109Leaded Power Transistor General PurposeCentral Semiconductor
483562N6109Power 7A 50V Discrete PNPON Semiconductor
483572N6109 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE.Continental Device India Limited
483582N6109Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V.General Electric Solid State
483592N6110EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483602N6110Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V.General Electric Solid State



Datasheets found :: 1351361Page: << | 1204 | 1205 | 1206 | 1207 | 1208 | 1209 | 1210 | 1211 | 1212 | 1213 | 1214 | >>
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