48241 | 1N5528BUR | Zener Voltage Regulator Diode | Microsemi |
48242 | 1N5528BUR-1 | Low Voltage Avalanche Zener | Microsemi |
48243 | 1N5528BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48244 | 1N5528C | Leaded Zener Diode General Purpose | Central Semiconductor |
48245 | 1N5528C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-2% tolerance. | Jinan Gude Electronic Device |
48246 | 1N5528C | Diode Zener Single 8.2V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48247 | 1N5528C-1 | Low Voltage Avalanche Zener | Microsemi |
48248 | 1N5528C-1E3 | Low Voltage Avalanche Zener | Microsemi |
48249 | 1N5528CUR-1 | Low Voltage Avalanche Zener | Microsemi |
48250 | 1N5528CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48251 | 1N5528D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48252 | 1N5528D | Diode Zener Single 8.2V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48253 | 1N5528D-1 | Low Voltage Avalanche Zener | Microsemi |
48254 | 1N5528D-1E3 | Low Voltage Avalanche Zener | Microsemi |
48255 | 1N5528DUR-1 | Low Voltage Avalanche Zener | Microsemi |
48256 | 1N5528DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48257 | 1N5529 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48258 | 1N5529 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
48259 | 1N5529 | Low Voltage Avalanche Zener | Microsemi |
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48260 | 1N5529 | Diode Zener Single 9.1V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48261 | 1N5529A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
48262 | 1N5529A | Low Voltage Avalanche Zener | Microsemi |
48263 | 1N5529A | Diode Zener Single 9.1V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48264 | 1N5529A-1 | Low Voltage Avalanche Zener | Microsemi |
48265 | 1N5529A-1E3 | Low Voltage Avalanche Zener | Microsemi |
48266 | 1N5529AUR-1 | Low Voltage Avalanche Zener | Microsemi |
48267 | 1N5529AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48268 | 1N5529B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
48269 | 1N5529B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
48270 | 1N5529B | Low Voltage Avalanche Zener | Microsemi |
48271 | 1N5529B | Low Voltage Avalanche Zener | Microsemi |
48272 | 1N5529B | Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48273 | 1N5529B (DO35) | Low Voltage Avalanche Zener | Microsemi |
48274 | 1N5529B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
48275 | 1N5529B-1 | Low Voltage Avalanche Zener | Microsemi |
48276 | 1N5529B-1E3 | Low Voltage Avalanche Zener | Microsemi |
48277 | 1N5529BUR | Zener Voltage Regulator Diode | Microsemi |
48278 | 1N5529BUR-1 | Low Voltage Avalanche Zener | Microsemi |
48279 | 1N5529BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48280 | 1N5529C | Leaded Zener Diode General Purpose | Central Semiconductor |