48161 | 1N5526B | Low Voltage Avalanche Zener | Microsemi |
48162 | 1N5526B | Low Voltage Avalanche Zener | Microsemi |
48163 | 1N5526B | Diode Zener Single 6.8V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48164 | 1N5526B (DO35) | Low Voltage Avalanche Zener | Microsemi |
48165 | 1N5526B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
48166 | 1N5526B-1 | Low Voltage Avalanche Zener | Microsemi |
48167 | 1N5526B-1E3 | Low Voltage Avalanche Zener | Microsemi |
48168 | 1N5526BUR | Zener Voltage Regulator Diode | Microsemi |
48169 | 1N5526BUR-1 | Low Voltage Avalanche Zener | Microsemi |
48170 | 1N5526BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48171 | 1N5526C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48172 | 1N5526C | Diode Zener Single 6.8V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48173 | 1N5526C-1 | Low Voltage Avalanche Zener | Microsemi |
48174 | 1N5526C-1E3 | Low Voltage Avalanche Zener | Microsemi |
48175 | 1N5526CUR-1 | Low Voltage Avalanche Zener | Microsemi |
48176 | 1N5526CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48177 | 1N5526D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48178 | 1N5526D | Diode Zener Single 6.8V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48179 | 1N5526D-1 | Low Voltage Avalanche Zener | Microsemi |
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48180 | 1N5526D-1E3 | Low Voltage Avalanche Zener | Microsemi |
48181 | 1N5526DUR-1 | Low Voltage Avalanche Zener | Microsemi |
48182 | 1N5526DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48183 | 1N5527 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48184 | 1N5527 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
48185 | 1N5527 | Low Voltage Avalanche Zener | Microsemi |
48186 | 1N5527 | Diode Zener Single 7.5V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48187 | 1N5527A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
48188 | 1N5527A | Low Voltage Avalanche Zener | Microsemi |
48189 | 1N5527A | Diode Zener Single 7.5V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48190 | 1N5527A-1 | Low Voltage Avalanche Zener | Microsemi |
48191 | 1N5527A-1E3 | Low Voltage Avalanche Zener | Microsemi |
48192 | 1N5527AUR-1 | Low Voltage Avalanche Zener | Microsemi |
48193 | 1N5527AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48194 | 1N5527B | Leaded Zener Diode General Purpose | Central Semiconductor |
48195 | 1N5527B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
48196 | 1N5527B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
48197 | 1N5527B | Low Voltage Avalanche Zener | Microsemi |
48198 | 1N5527B | Low Voltage Avalanche Zener | Microsemi |
48199 | 1N5527B | Diode Zener Single 7.5V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48200 | 1N5527B (DO35) | Low Voltage Avalanche Zener | Microsemi |