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Datasheets found :: 1351361Page: << | 1203 | 1204 | 1205 | 1206 | 1207 | 1208 | 1209 | 1210 | 1211 | 1212 | 1213 | >>
Nr.Part NameDescriptionManufacturer by
482812N6071-DSensitive Gate Triacs Silicon Bidirectional ThyristorsON Semiconductor
482822N6071ATRIACs 4 AMPERES RMS 200 thru 600 VOLTSMotorola
482832N6071ASensitive Gate TriacsON Semiconductor
482842N6071BTRIACs 4 AMPERES RMS 200 thru 600 VOLTSMotorola
482852N6071BSensitive Gate TriacsON Semiconductor
482862N6071BTSensitive Gate TriacsON Semiconductor
482872N6072Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.Motorola
482882N6072ASensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.Motorola
482892N6072BSensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.Motorola
482902N6073Leaded Thyristor TRIACCentral Semiconductor
482912N6073Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V.Motorola
482922N6073ATRIACs 4 AMPERES RMS 200 thru 600 VOLTSMotorola
482932N6073ASensitive Gate TriacsON Semiconductor
482942N6073ASensitive Gate TriacsON Semiconductor
482952N6073BTRIACs 4 AMPERES RMS 200 thru 600 VOLTSMotorola
482962N6073BSensitive Gate TriacsON Semiconductor
482972N6074Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.Motorola
482982N6074ASensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.Motorola



482992N6074BSensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.Motorola
483002N6075Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.Motorola
483012N6075ATRIACs 4 AMPERES RMS 200 thru 600 VOLTSMotorola
483022N6075ALeaded Thyristor TRIACCentral Semiconductor
483032N6075ASensitive Gate TriacsON Semiconductor
483042N6075BTRIACs 4 AMPERES RMS 200 thru 600 VOLTSMotorola
483052N6075BSensitive Gate TriacsON Semiconductor
483062N6076SILICON PNP SMALL SIGNAL TRANSISTORFairchild Semiconductor
483072N6076Leaded Small Signal Transistor General PurposeCentral Semiconductor
483082N6076PNP silicon transistor. 25V, 100mA.General Electric Solid State
483092N6076_D26ZSilicon PNP Small Signal TransistorFairchild Semiconductor
483102N6076_D27ZSilicon PNP Small Signal TransistorFairchild Semiconductor
483112N6076_D75ZSilicon PNP Small Signal TransistorFairchild Semiconductor
483122N6077Bipolar NPN Device in a Hermetically sealed TO66 Metal PackageSemeLAB
483132N6077High-voltage, high-power silicon N-P-N transistor.General Electric Solid State
483142N6078NPN MULTI-EPITAXIAL POWER TRANSISTORSemeLAB
483152N6078NPN MULTI-EPITAXIAL POWER TRANSISTORSemeLAB
483162N6078High-voltage, high-power silicon N-P-N transistor.General Electric Solid State
483172N6079Bipolar NPN Device in a Hermetically sealed TO66 Metal PackageSemeLAB
483182N6079High-voltage, high-power silicon N-P-N transistor.General Electric Solid State
483192N6080RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483202N6080RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi



Datasheets found :: 1351361Page: << | 1203 | 1204 | 1205 | 1206 | 1207 | 1208 | 1209 | 1210 | 1211 | 1212 | 1213 | >>
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