| Nr. | Part Name | Description | Manufacturer by |
| 48281 | 2N6071-D | Sensitive Gate Triacs Silicon Bidirectional Thyristors | ON Semiconductor |
| 48282 | 2N6071A | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 48283 | 2N6071A | Sensitive Gate Triacs | ON Semiconductor |
| 48284 | 2N6071B | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 48285 | 2N6071B | Sensitive Gate Triacs | ON Semiconductor |
| 48286 | 2N6071BT | Sensitive Gate Triacs | ON Semiconductor |
| 48287 | 2N6072 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. | Motorola |
| 48288 | 2N6072A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. | Motorola |
| 48289 | 2N6072B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. | Motorola |
| 48290 | 2N6073 | Leaded Thyristor TRIAC | Central Semiconductor |
| 48291 | 2N6073 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. | Motorola |
| 48292 | 2N6073A | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 48293 | 2N6073A | Sensitive Gate Triacs | ON Semiconductor |
| 48294 | 2N6073A | Sensitive Gate Triacs | ON Semiconductor |
| 48295 | 2N6073B | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 48296 | 2N6073B | Sensitive Gate Triacs | ON Semiconductor |
| 48297 | 2N6074 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. | Motorola |
| 48298 | 2N6074A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. | Motorola |
| 48299 | 2N6074B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. | Motorola |
| 48300 | 2N6075 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. | Motorola |
| 48301 | 2N6075A | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 48302 | 2N6075A | Leaded Thyristor TRIAC | Central Semiconductor |
| 48303 | 2N6075A | Sensitive Gate Triacs | ON Semiconductor |
| 48304 | 2N6075B | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 48305 | 2N6075B | Sensitive Gate Triacs | ON Semiconductor |
| 48306 | 2N6076 | SILICON PNP SMALL SIGNAL TRANSISTOR | Fairchild Semiconductor |
| 48307 | 2N6076 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 48308 | 2N6076 | PNP silicon transistor. 25V, 100mA. | General Electric Solid State |
| 48309 | 2N6076_D26Z | Silicon PNP Small Signal Transistor | Fairchild Semiconductor |
| 48310 | 2N6076_D27Z | Silicon PNP Small Signal Transistor | Fairchild Semiconductor |
| 48311 | 2N6076_D75Z | Silicon PNP Small Signal Transistor | Fairchild Semiconductor |
| 48312 | 2N6077 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package | SemeLAB |
| 48313 | 2N6077 | High-voltage, high-power silicon N-P-N transistor. | General Electric Solid State |
| 48314 | 2N6078 | NPN MULTI-EPITAXIAL POWER TRANSISTOR | SemeLAB |
| 48315 | 2N6078 | NPN MULTI-EPITAXIAL POWER TRANSISTOR | SemeLAB |
| 48316 | 2N6078 | High-voltage, high-power silicon N-P-N transistor. | General Electric Solid State |
| 48317 | 2N6079 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package | SemeLAB |
| 48318 | 2N6079 | High-voltage, high-power silicon N-P-N transistor. | General Electric Solid State |
| 48319 | 2N6080 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
| 48320 | 2N6080 | RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS | Microsemi |
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