| 48121 | 1N5525B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48122 | 1N5525B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48123 | 1N5525B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 48124 | 1N5525B | Low Voltage Avalanche Zener | Microsemi |
| 48125 | 1N5525B | Low Voltage Avalanche Zener | Microsemi |
| 48126 | 1N5525B | Diode Zener Single 6.2V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48127 | 1N5525B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 48128 | 1N5525B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48129 | 1N5525B-1 | Low Voltage Avalanche Zener | Microsemi |
| 48130 | 1N5525B-1 | Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48131 | 1N5525B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48132 | 1N5525BUR | Zener Voltage Regulator Diode | Microsemi |
| 48133 | 1N5525BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48134 | 1N5525BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48135 | 1N5525C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48136 | 1N5525C | Diode Zener Single 6.2V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48137 | 1N5525C-1 | Low Voltage Avalanche Zener | Microsemi |
| 48138 | 1N5525C-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48139 | 1N5525CUR-1 | Low Voltage Avalanche Zener | Microsemi |
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| 48140 | 1N5525CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48141 | 1N5525D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48142 | 1N5525D | Diode Zener Single 6.2V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48143 | 1N5525D-1 | Low Voltage Avalanche Zener | Microsemi |
| 48144 | 1N5525D-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48145 | 1N5525DUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48146 | 1N5525DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48147 | 1N5526 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48148 | 1N5526 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 48149 | 1N5526 | Low Voltage Avalanche Zener | Microsemi |
| 48150 | 1N5526 | Diode Zener Single 6.8V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48151 | 1N5526A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 48152 | 1N5526A | Low Voltage Avalanche Zener | Microsemi |
| 48153 | 1N5526A | Diode Zener Single 6.8V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48154 | 1N5526A-1 | Low Voltage Avalanche Zener | Microsemi |
| 48155 | 1N5526A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48156 | 1N5526AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48157 | 1N5526AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48158 | 1N5526B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48159 | 1N5526B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48160 | 1N5526B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
