| 755921 | IRF330 | 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET | Intersil |
| 755922 | IRF330 | Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA | New Jersey Semiconductor |
| 755923 | IRF330 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755924 | IRF330-333 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V | Fairchild Semiconductor |
| 755925 | IRF3305 | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755926 | IRF3305PBF | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755927 | IRF330R | Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
| 755928 | IRF331 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V | Fairchild Semiconductor |
| 755929 | IRF331 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. | General Electric Solid State |
| 755930 | IRF331 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil |
| 755931 | IRF331 | Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 | New Jersey Semiconductor |
| 755932 | IRF331 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755933 | IRF3315 | 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755934 | IRF3315L | 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755935 | IRF3315L | Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 | New Jersey Semiconductor |
| 755936 | IRF3315LPBF | 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755937 | IRF3315PBF | 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755938 | IRF3315S | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755939 | IRF3315STRL | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
|
| 755940 | IRF3315STRR | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755941 | IRF3315STRRPBF | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755942 | IRF331R | Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
| 755943 | IRF332 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V | Fairchild Semiconductor |
| 755944 | IRF332 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
| 755945 | IRF332 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil |
| 755946 | IRF332 | Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755947 | IRF332 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755948 | IRF333 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V | Fairchild Semiconductor |
| 755949 | IRF333 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
| 755950 | IRF333 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil |
| 755951 | IRF333 | Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3 | New Jersey Semiconductor |
| 755952 | IRF333 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755953 | IRF340 | N-Channel Power MOSFETs/ 10A/ 350V/400V | Fairchild Semiconductor |
| 755954 | IRF340 | 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 755955 | IRF340 | 10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs | Intersil |
| 755956 | IRF340 | Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) TO-204AA | New Jersey Semiconductor |
| 755957 | IRF340 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755958 | IRF340-343 | N-Channel Power MOSFETs/ 10A/ 350V/400V | Fairchild Semiconductor |
| 755959 | IRF341 | N-Channel Power MOSFETs/ 10A/ 350V/400V | Fairchild Semiconductor |
| 755960 | IRF341 | Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
