| 755761 | IRF232 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755762 | IRF232 | Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755763 | IRF232 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755764 | IRF232R | Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755765 | IRF233 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 755766 | IRF233 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. | General Electric Solid State |
| 755767 | IRF233 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755768 | IRF233 | Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755769 | IRF233 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755770 | IRF234 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755771 | IRF235 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755772 | IRF236 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755773 | IRF237 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755774 | IRF240 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 755775 | IRF240 | 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | International Rectifier |
| 755776 | IRF240 | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET | Intersil |
| 755777 | IRF240 | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755778 | IRF240 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 755779 | IRF240 | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | SemeLAB |
|
| 755780 | IRF240-243 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 755781 | IRF240SMD | N.CHANNEL POWER MOSFET | SemeLAB |
| 755782 | IRF241 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 755783 | IRF241 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. | General Electric Solid State |
| 755784 | IRF241 | 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs | Intersil |
| 755785 | IRF241 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 755786 | IRF242 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 755787 | IRF242 | 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs | Intersil |
| 755788 | IRF242 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 755789 | IRF243 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 755790 | IRF243 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. | General Electric Solid State |
| 755791 | IRF243 | 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs | Intersil |
| 755792 | IRF243 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 755793 | IRF244 | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755794 | IRF245 | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755795 | IRF246 | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755796 | IRF247 | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755797 | IRF250 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. | General Electric Solid State |
| 755798 | IRF250 | 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | International Rectifier |
| 755799 | IRF250 | 30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET | Intersil |
| 755800 | IRF250 | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
