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Datasheets found :: 1726161
Page: << | 18891 | 18892 | 18893 | 18894 | 18895 | 18896 | 18897 | 18898 | 18899 | 18900 | 18901 | >>
No.Part NameDescriptionManufacturer
755801IRF250N-CHANNEL POWER MOSFETSSamsung Electronic
755802IRF250N-CHANNEL POWER MOSFETSemeLAB
755803IRF250CFTrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755804IRF250FITrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755805IRF250RTrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755806IRF250SMDN.CHANNEL POWER MOSFETSemeLAB
755807IRF251N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
755808IRF25125A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
755809IRF251Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755810IRF251N-CHANNEL POWER MOSFETSSamsung Electronic
755811IRF252N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A.General Electric Solid State
755812IRF25225A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
755813IRF252Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755814IRF252N-CHANNEL POWER MOSFETSSamsung Electronic
755815IRF252RTrans MOSFET 200V 25A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755816IRF253N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A.General Electric Solid State
755817IRF25325A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
755818IRF253Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755819IRF253N-CHANNEL POWER MOSFETSSamsung Electronic


755820IRF254250V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
755821IRF280440V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755822IRF2804L40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755823IRF2804LPBF40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755824IRF2804PBF40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755825IRF2804S40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755826IRF2804S-7PAUTOMOTIVE MOSFETInternational Rectifier
755827IRF2804STRL7PP40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package.International Rectifier
755828IRF2804STRRPBF40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755829IRF280555V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755830IRF2805L55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755831IRF2805LPBF55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755832IRF2805PBF55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755833IRF2805S55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755834IRF2805STRLPBF55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755835IRF2805STRRLeaded 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755836IRF280775V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755837IRF2807L75V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755838IRF2807LPBF75V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755839IRF2807PBF75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755840IRF2807S75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier


Datasheets found :: 1726161
Page: << | 18891 | 18892 | 18893 | 18894 | 18895 | 18896 | 18897 | 18898 | 18899 | 18900 | 18901 | >>


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