| 755881 | IRF320 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. | General Electric Solid State |
| 755882 | IRF320 | 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755883 | IRF320 | Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755884 | IRF320 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755885 | IRF320-323 | N-Channel Power MOSFETs/ 3.0 A/ 350-400 V | Fairchild Semiconductor |
| 755886 | IRF3205 | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755887 | IRF3205L | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755888 | IRF3205LPBF | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755889 | IRF3205PBF | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755890 | IRF3205S | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755891 | IRF3205SPBF | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755892 | IRF3205STRL | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755893 | IRF3205STRLPBF | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755894 | IRF3205STRR | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755895 | IRF3205VPBF | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755896 | IRF3205Z | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package | International Rectifier |
| 755897 | IRF3205ZL | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package | International Rectifier |
| 755898 | IRF3205ZLPBF | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package | International Rectifier |
| 755899 | IRF3205ZPBF | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package | International Rectifier |
|
| 755900 | IRF3205ZS | 55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package | International Rectifier |
| 755901 | IRF3205ZSPBF | 55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package | International Rectifier |
| 755902 | IRF3205ZSTRLPBF | 55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package | International Rectifier |
| 755903 | IRF321 | N-Channel Power MOSFETs/ 3.0 A/ 350-400 V | Fairchild Semiconductor |
| 755904 | IRF321 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. | General Electric Solid State |
| 755905 | IRF321 | 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755906 | IRF321 | Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755907 | IRF321 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755908 | IRF322 | N-Channel Power MOSFETs/ 3.0 A/ 350-400 V | Fairchild Semiconductor |
| 755909 | IRF322 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. | General Electric Solid State |
| 755910 | IRF322 | 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755911 | IRF322 | Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755912 | IRF322 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755913 | IRF323 | N-Channel Power MOSFETs/ 3.0 A/ 350-400 V | Fairchild Semiconductor |
| 755914 | IRF323 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. | General Electric Solid State |
| 755915 | IRF323 | 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755916 | IRF323 | Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755917 | IRF323 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755918 | IRF330 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V | Fairchild Semiconductor |
| 755919 | IRF330 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. | General Electric Solid State |
| 755920 | IRF330 | 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
