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Datasheets found :: 1567829
Page: << | 6722 | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | 6730 | 6731 | 6732 | >>
No.Part NameDescriptionManufacturer
269041BC302-4 0.850W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.500A Ic, 40 - 80 hFE.Continental Device India Limited
269042BC302-5 0.850W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.500A Ic, 70 - 140 hFE.Continental Device India Limited
269043BC302-6 0.850W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.500A Ic, 120 - 240 hFE.Continental Device India Limited
269044BC303Leaded Small Signal Transistor General PurposeCentral Semiconductor
269045BC303 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 240 hFE.Continental Device India Limited
269046BC303PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHESMicro Electronics
269047BC303-4 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 80 hFE.Continental Device India Limited
269048BC303-5 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE.Continental Device India Limited
269049BC303-6 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 120 - 240 hFE.Continental Device India Limited
269050BC304Leaded Small Signal Transistor General PurposeCentral Semiconductor
269051BC304 0.850W General Purpose PNP Metal Can Transistor. 45V Vceo, 0.500A Ic, 40 - 240 hFE.Continental Device India Limited
269052BC304PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHESMicro Electronics
269053BC307 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
269054BC307Switching and Amplifier ApplicationsFairchild Semiconductor
269055BC307General Purpose TransistorKorea Electronics (KEC)
269056BC307PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
269057BC307Amplifier Transistors(PNP)Motorola
269058BC307Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 BulkNew Jersey Semiconductor
269059BC307Amplifier Transistor PNPON Semiconductor


269060BC307PNP general purpose transistorsPhilips
269061BC307Tranzystor ma³ej czêstotliwo¶ci ma³ej mocyUltra CEMI
269062BC307Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.USHA India LTD
269063BC307-16Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/RNew Jersey Semiconductor
269064BC307-DAmplifier Transistors PNP SiliconON Semiconductor
269065BC307A 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
269066BC307APNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
269067BC307ATrans GP BJT PNP 45V 0.1A 3-Pin TO-92New Jersey Semiconductor
269068BC307ABUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269069BC307ATAPNP Epitaxial Silicon TransistorFairchild Semiconductor
269070BC307B 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
269071BC307BPNP Epitaxial Silicon TransistorFairchild Semiconductor
269072BC307BAmplifier Transistors(PNP)Motorola
269073BC307BTrans GP BJT PNP 45V 0.1A 3-Pin TO-92 BulkNew Jersey Semiconductor
269074BC307BTransistor Silicon PNPON Semiconductor
269075BC307BPNP general purpose transistorsPhilips
269076BC307BBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269077BC307BRL1Transistor Silicon PNPON Semiconductor
269078BC307BTAPNP Epitaxial Silicon TransistorFairchild Semiconductor
269079BC307BTFPNP Epitaxial Silicon TransistorFairchild Semiconductor
269080BC307BTFRPNP Epitaxial Silicon TransistorFairchild Semiconductor


Datasheets found :: 1567829
Page: << | 6722 | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | 6730 | 6731 | 6732 | >>

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