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Datasheets found :: 1567829
Page: << | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | 6730 | 6731 | 6732 | 6733 | >>
No.Part NameDescriptionManufacturer
269081BC307BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269082BC307BZL1Transistor Silicon PNPON Semiconductor
269083BC307C 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFEContinental Device India Limited
269084BC307CAmplifier Transistors(PNP)Motorola
269085BC307CTrans GP BJT PNP 45V 0.1A 3-Pin TO-92 BulkNew Jersey Semiconductor
269086BC307CTransistor Silicon Plastic PNPON Semiconductor
269087BC307CBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269088BC307CZL1Amplifier Transistor PNPON Semiconductor
269089BC308 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
269090BC308Switching and Amplifier ApplicationsFairchild Semiconductor
269091BC308General Purpose TransistorKorea Electronics (KEC)
269092BC308PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
269093BC308Tranzystor ma³ej czêstotliwo¶ci ma³ej mocyUltra CEMI
269094BC308Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.USHA India LTD
269095BC308A 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
269096BC308APNP Epitaxial Silicon TransistorFairchild Semiconductor
269097BC308ABUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269098BC308ATAPNP Epitaxial Silicon TransistorFairchild Semiconductor
269099BC308ATFPNP Epitaxial Silicon TransistorFairchild Semiconductor


269100BC308ATFRPNP Epitaxial Silicon TransistorFairchild Semiconductor
269101BC308B 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
269102BC308BPNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
269103BC308BBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269104BC308BTAPNP Epitaxial Silicon TransistorFairchild Semiconductor
269105BC308BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269106BC308CPNP Epitaxial Silicon TransistorFairchild Semiconductor
269107BC308CAmplifier Transistors(PNP)Motorola
269108BC308CAmplifier Transistors(PNP Silicon)ON Semiconductor
269109BC308CBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269110BC308TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
269111BC308TARPNP Epitaxial Silicon TransistorFairchild Semiconductor
269112BC309Switching and Amplifier ApplicationsFairchild Semiconductor
269113BC309General Purpose TransistorKorea Electronics (KEC)
269114BC309PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
269115BC309Tranzystor ma³ej czêstotliwo¶ci ma³ej mocyUltra CEMI
269116BC309Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.USHA India LTD
269117BC309A 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
269118BC309APNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
269119BC309ABUPNP Epitaxial Silicon TransistorFairchild Semiconductor
269120BC309ATAPNP Epitaxial Silicon TransistorFairchild Semiconductor


Datasheets found :: 1567829
Page: << | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | 6730 | 6731 | 6732 | 6733 | >>

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