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Datasheets found :: 1567829
Page: << | 6720 | 6721 | 6722 | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | 6730 | >>
No.Part NameDescriptionManufacturer
268961BC238A 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
268962BC238ANPN Epitaxial Silicon TransistorFairchild Semiconductor
268963BC238ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268964BC238ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
268965BC238ATFNPN Epitaxial Silicon TransistorFairchild Semiconductor
268966BC238ATFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
268967BC238B 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
268968BC238BAmplifier TransistorsMotorola
268969BC238BBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268970BC238BTANPN Epitaxial Silicon TransistorFairchild Semiconductor
268971BC238BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268972BC238C 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380 - 800 hFEContinental Device India Limited
268973BC238CAmplifier TransistorsMotorola
268974BC238CAmplifier Transistor NPNON Semiconductor
268975BC238CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268976BC238CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
268977BC238TARNPN Epitaxial Silicon TransistorFairchild Semiconductor
268978BC238TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
268979BC238TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor


268980BC239 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
268981BC239Switching and Amplifier ApplicationsFairchild Semiconductor
268982BC239General Purpose TransistorKorea Electronics (KEC)
268983BC239NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
268984BC239Amplifier TransistorsMotorola
268985BC239Tranzystor ma³ej czêstotliwo¶ci ma³ej mocyUltra CEMI
268986BC239Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.USHA India LTD
268987BC239ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268988BC239ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
268989BC239B 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
268990BC239BBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268991BC239BTANPN Epitaxial Silicon TransistorFairchild Semiconductor
268992BC239C 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380 - hFEContinental Device India Limited
268993BC239CAmplifier TransistorsMotorola
268994BC239CTransistor Silicon NPNON Semiconductor
268995BC239CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268996BC239CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
268997BC243APOWER TRANSISTORS(6A,65W)MOSPEC Semiconductor
268998BC251AMPLIFIER TRANSISTORS PNP SILICONMotorola
268999BC251AAMPLIFIER TRANSISTORS PNP SILICONMotorola
269000BC251BAMPLIFIER TRANSISTORS PNP SILICONMotorola


Datasheets found :: 1567829
Page: << | 6720 | 6721 | 6722 | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | 6730 | >>

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