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Datasheets found :: 1567829
Page: << | 6719 | 6720 | 6721 | 6722 | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | >>
No.Part NameDescriptionManufacturer
268921BC237Tranzystor krzemowy małej mocy, małej częstotliwościUltra CEMI
268922BC237Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.USHA India LTD
268923BC237-DAmplifier Transistors NPN SiliconON Semiconductor
268924BC237A 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
268925BC237ANPN Epitaxial Silicon TransistorFairchild Semiconductor
268926BC237ATO-92 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
268927BC237AAmplifier TransistorsMotorola
268928BC237AAmplifier Transistor NPNON Semiconductor
268929BC237ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268930BC237ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
268931BC237AZL1Amplifier Transistor NPNON Semiconductor
268932BC237B 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
268933BC237BNPN Epitaxial Silicon TransistorFairchild Semiconductor
268934BC237BTO-92 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
268935BC237BAmplifier TransistorsMotorola
268936BC237BTransistor Silicon NPNON Semiconductor
268937BC237BNPN general purpose transistorsPhilips
268938BC237BBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268939BC237BRL1Transistor Silicon NPNON Semiconductor


268940BC237BTANPN Epitaxial Silicon TransistorFairchild Semiconductor
268941BC237BTARNPN Epitaxial Silicon TransistorFairchild Semiconductor
268942BC237BTFNPN Epitaxial Silicon TransistorFairchild Semiconductor
268943BC237BTFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
268944BC237BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268945BC237BZL1Transistor Silicon NPNON Semiconductor
268946BC237C 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 380 - 800 hFEContinental Device India Limited
268947BC237CTO-92 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
268948BC237CAmplifier TransistorsMotorola
268949BC237CTransistor Silicon Plastic NPNON Semiconductor
268950BC237CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
268951BC237CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
268952BC237TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
268953BC237TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
268954BC238 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
268955BC238Switching and Amplifier ApplicationsFairchild Semiconductor
268956BC238General Purpose TransistorKorea Electronics (KEC)
268957BC238NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
268958BC238Tranzystor małej częstotliwości małej mocyUltra CEMI
268959BC238Tranzystor krzemowy małej mocy, małej częstotliwościUltra CEMI
268960BC238Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.USHA India LTD


Datasheets found :: 1567829
Page: << | 6719 | 6720 | 6721 | 6722 | 6723 | 6724 | 6725 | 6726 | 6727 | 6728 | 6729 | >>

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