| 758121 | IRF9140 | 19A/ -100V/ 0.200 Ohm/ P-Channel Power MOSFET | Intersil |
| 758122 | IRF9140 | 100 V, P-channel power MOSFET | Samsung Electronic |
| 758123 | IRF9140 | P-CHANNEL POWER MOSFET | SemeLAB |
| 758124 | IRF9141 | -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs | Intersil |
| 758125 | IRF9141 | 60 V, P-channel power MOSFET | Samsung Electronic |
| 758126 | IRF9142 | -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs | Intersil |
| 758127 | IRF9142 | 100 V, P-channel power MOSFET | Samsung Electronic |
| 758128 | IRF9143 | -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs | Intersil |
| 758129 | IRF9143 | 60 V, P-channel power MOSFET | Samsung Electronic |
| 758130 | IRF9150 | 25A/ -100V/ 0.150 Ohm/ P-Channel Power MOSFET | Intersil |
| 758131 | IRF9150 | P Channel MOSFET | Microsemi |
| 758132 | IRF9150 | Trans MOSFET P-CH 100V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 758133 | IRF9151 | -25A, -80V and -100V, 0.150 Ohm, P-Channel Power MOSFETs | Intersil |
| 758134 | IRF9151 | Trans MOSFET P-CH 100V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 758135 | IRF9204 | -40V Single P-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 758136 | IRF9204PBF | -40V Single P-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 758137 | IRF9230 | -200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 758138 | IRF9230 | 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs | Intersil |
| 758139 | IRF9230 | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
|
| 758140 | IRF9230 | 200 V, P-channel power MOSFET | Samsung Electronic |
| 758141 | IRF9230 | P-CHANNEL POWER MOSFET | SemeLAB |
| 758142 | IRF9231 | 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs | Intersil |
| 758143 | IRF9231 | HEXFET POWER MOSFETS | New Jersey Semiconductor |
| 758144 | IRF9231 | 150 V, P-channel power MOSFET | Samsung Electronic |
| 758145 | IRF9232 | 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs | Intersil |
| 758146 | IRF9232 | HEXFET POWER MOSFETS | New Jersey Semiconductor |
| 758147 | IRF9232 | 200 V, P-channel power MOSFET | Samsung Electronic |
| 758148 | IRF9233 | 5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs | Intersil |
| 758149 | IRF9233 | 150 V, P-channel power MOSFET | Samsung Electronic |
| 758150 | IRF9240 | -200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 758151 | IRF9240 | 11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET | Intersil |
| 758152 | IRF9240 | Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 758153 | IRF9240 | 200 V, P-channel power MOSFET | Samsung Electronic |
| 758154 | IRF9240 | P-CHANNEL POWER MOSFET | SemeLAB |
| 758155 | IRF9240-SMD | P-CHANNEL POWER MOSFET | SemeLAB |
| 758156 | IRF9240SMD | 200V Vdss P-Channel FET (field effect transistor) | SemeLAB |
| 758157 | IRF9241 | -9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs | Intersil |
| 758158 | IRF9241 | HEXFET POWER MOSFETS | New Jersey Semiconductor |
| 758159 | IRF9241 | 150 V, P-channel power MOSFET | Samsung Electronic |
| 758160 | IRF9242 | -9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs | Intersil |
