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Datasheets found :: 1726161
Page: << | 18945 | 18946 | 18947 | 18948 | 18949 | 18950 | 18951 | 18952 | 18953 | 18954 | 18955 | >>
No.Part NameDescriptionManufacturer
757961IRF822N-CHANNEL POWER MOSFETSSamsung Electronic
757962IRF822N-channel enhancement mode power MOS transistor, 500V, 2.8ASGS Thomson Microelectronics
757963IRF822FIN-channel enhancement mode power MOS transistor, 500V, 1.9ASGS Thomson Microelectronics
757964IRF822FIN CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORSST Microelectronics
757965IRF823N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 VFairchild Semiconductor
757966IRF823N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A.General Electric Solid State
757967IRF823N-CHANNEL Enhancement-Mode Silicon Gate TMOSMotorola
757968IRF823N-CHANNEL POWER MOSFETSSamsung Electronic
757969IRF823N-channel MOSFET, 450V, 2.2ASGS Thomson Microelectronics
757970IRF823FIN-channel MOSFET, 450V, 1.5ASGS Thomson Microelectronics
757971IRF825225V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC convertersInternational Rectifier
757972IRF8252PBF-125V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageInternational Rectifier
757973IRF8252TRPBF25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC convertersInternational Rectifier
757974IRF8252TRPBF-125V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageInternational Rectifier
757975IRF82FIN CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORSST Microelectronics
757976IRF830POWER MOSFETBayLinear
757977IRF8304.5A, 500V, 1.500 Ohm, N-Channel Power MOSFETFairchild Semiconductor
757978IRF830N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
757979IRF830500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier


757980IRF8304.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFETIntersil
757981IRF830Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220ABNew Jersey Semiconductor
757982IRF830Power Field Effect TransistorON Semiconductor
757983IRF830PowerMOS transistor Avalanche energy ratedPhilips
757984IRF830N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFETSGS Thomson Microelectronics
757985IRF830N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFETST Microelectronics
757986IRF830500 V,power field effect transistorTRANSYS Electronics Limited
757987IRF830N-CHANNEL ENHANCEMENT MODETRSYS
757988IRF830-DPower Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOSON Semiconductor
757989IRF8301MA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.International Rectifier
757990IRF8301MTRPBFA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.International Rectifier
757991IRF8302M30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.International Rectifier
757992IRF8302MTR1PBF30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.International Rectifier
757993IRF8304MA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.International Rectifier
757994IRF8304MTR1PBFA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.International Rectifier
757995IRF8306M30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance.International Rectifier
757996IRF8306MTR1PBF30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance.International Rectifier
757997IRF8308MA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance.International Rectifier
757998IRF8308MTR1PBFA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance.International Rectifier
757999IRF830A500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
758000IRF830AL500V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier


Datasheets found :: 1726161
Page: << | 18945 | 18946 | 18947 | 18948 | 18949 | 18950 | 18951 | 18952 | 18953 | 18954 | 18955 | >>


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