| 757921 | IRF8010STRLPBF | 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package | International Rectifier |
| 757922 | IRF8113 | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757923 | IRF8113G | Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757924 | IRF8113GTRPBF | Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757925 | IRF8113PBF | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757926 | IRF8113PBF-1 | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757927 | IRF8113TR | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757928 | IRF8113TRPBF-1 | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
| 757929 | IRF8113UPBF | 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market | International Rectifier |
| 757930 | IRF8113UTRPBF | 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market | International Rectifier |
| 757931 | IRF82 | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS | ST Microelectronics |
| 757932 | IRF820 | POWER MOSFET | BayLinear |
| 757933 | IRF820 | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET | Fairchild Semiconductor |
| 757934 | IRF820 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. | General Electric Solid State |
| 757935 | IRF820 | 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 757936 | IRF820 | 2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET | Intersil |
| 757937 | IRF820 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS | Motorola |
| 757938 | IRF820 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 757939 | IRF820 | N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET | SGS Thomson Microelectronics |
|
| 757940 | IRF820 | N-CHANNEL 500V - 2.5 OHM - 4A - TO-220 POWERMESH II MOSFET | ST Microelectronics |
| 757941 | IRF820A | 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 757942 | IRF820AL | 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 757943 | IRF820APBF | 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 757944 | IRF820AS | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 757945 | IRF820ASTRL | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 757946 | IRF820ASTRR | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 757947 | IRF820B | 500V N-Channel MOSFET | Fairchild Semiconductor |
| 757948 | IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | SGS Thomson Microelectronics |
| 757949 | IRF820PBF | 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 757950 | IRF820S | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 757951 | IRF820STRL | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 757952 | IRF820STRR | 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 757953 | IRF821 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V | Fairchild Semiconductor |
| 757954 | IRF821 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. | General Electric Solid State |
| 757955 | IRF821 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS | Motorola |
| 757956 | IRF821 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 757957 | IRF821 | N-channel MOSFET, 450V, 2.5A | SGS Thomson Microelectronics |
| 757958 | IRF821FI | N-channel MOSFET, 450V, 2.0A | SGS Thomson Microelectronics |
| 757959 | IRF822 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V | Fairchild Semiconductor |
| 757960 | IRF822 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. | General Electric Solid State |
