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Datasheets found :: 1726161
Page: << | 2305 | 2306 | 2307 | 2308 | 2309 | 2310 | 2311 | 2312 | 2313 | 2314 | 2315 | >>
No.Part NameDescriptionManufacturer
923612N6520Leaded Small Signal Transistor General PurposeCentral Semiconductor
923622N6520 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFEContinental Device India Limited
923632N6520PNP SILICON PLANAR MEDIUM POWER TRANSISTORDiodes
923642N6520PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
923652N6520Ic=500mA, Vce=10V transistorMCC
923662N6520High Voltage Transistor 625mWMicro Commercial Components
923672N6520High Voltage TransistorsON Semiconductor
923682N6520PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
923692N6520High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
923702N6520PNP SILICON PLANAR MEDIUM POWER TRANSISTORZetex Semiconductors
923712N6520BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
923722N6520RL1High Voltage TransistorsON Semiconductor
923732N6520RLRAHigh Voltage TransistorsON Semiconductor
923742N6520RLRMHigh Voltage TransistorsON Semiconductor
923752N6520TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
923762N652APNP Germanium transistor in the audio-frequency range applicationsMotorola
923772N652AGermanium PNP TransistorMotorola
923782N652ATrans GP BJT PNP 0.5ANew Jersey Semiconductor
923792N653PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency rangeMotorola


923802N653Germanium PNP TransistorMotorola
923812N653Trans GP BJT NPN 350V 0.5A 3-Pin TO-92New Jersey Semiconductor
923822N6530Leaded Power Transistor DarlingtonCentral Semiconductor
923832N65308 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.General Electric Solid State
923842N6530Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
923852N6530Silicon NPN Power Transistors TO-220 packageSavantic
923862N6531Leaded Power Transistor DarlingtonCentral Semiconductor
923872N65318 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.General Electric Solid State
923882N6531Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
923892N6531Silicon NPN Power Transistors TO-220 packageSavantic
923902N6532Leaded Power Transistor DarlingtonCentral Semiconductor
923912N65328 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.General Electric Solid State
923922N6532Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
923932N6532Silicon NPN Power Transistors TO-220 packageSavantic
923942N6533Leaded Power Transistor DarlingtonCentral Semiconductor
923952N65338 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.General Electric Solid State
923962N6533Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
923972N6533Silicon NPN Power Transistors TO-220 packageSavantic
923982N6534Silicon NPN Power Transistors TO-66 packageSavantic
923992N6535Trans GP BJT NPN 100V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
924002N6535Silicon NPN Power Transistors TO-66 packageSavantic


Datasheets found :: 1726161
Page: << | 2305 | 2306 | 2307 | 2308 | 2309 | 2310 | 2311 | 2312 | 2313 | 2314 | 2315 | >>


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