| 92561 | 2N6648 | PNP Darlington Transistor | Microsemi |
| 92562 | 2N6648 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 92563 | 2N6648 | Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92564 | 2N6648E3 | Darlington Transistors | Microsemi |
| 92565 | 2N6649 | Leaded Power Transistor Darlington | Central Semiconductor |
| 92566 | 2N6649 | 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 92567 | 2N6649 | PNP Darlington Transistor | Microsemi |
| 92568 | 2N6649 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 92569 | 2N6649 | Trans Darlington PNP 60V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92570 | 2N6649E3 | BJT( BiPolar Junction Transistor) | Microsemi |
| 92571 | 2N665 | PNP germanium power transistor in military and industrial equipment | Motorola |
| 92572 | 2N665 | Germanium PNP Transistor | Motorola |
| 92573 | 2N665 | Germanium PNP Power Transistor, TO-3 Package | Silicon Transistor Corporation |
| 92574 | 2N6650 | Leaded Power Transistor Darlington | Central Semiconductor |
| 92575 | 2N6650 | 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 92576 | 2N6650 | PNP Darlington Transistor | Microsemi |
| 92577 | 2N6650 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 92578 | 2N6650 | Trans Darlington PNP 80V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92579 | 2N6650E3 | BJT( BiPolar Junction Transistor) | Microsemi |
|
| 92580 | 2N6653 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92581 | 2N6653 | Trans GP BJT NPN 300V 20A | New Jersey Semiconductor |
| 92582 | 2N6653 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 92583 | 2N6653 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | SemeLAB |
| 92584 | 2N6653/1 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92585 | 2N6653/2 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92586 | 2N6653/3 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92587 | 2N6653/4 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92588 | 2N6653A | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92589 | 2N6653B | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92590 | 2N6654 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92591 | 2N6654 | Trans GP BJT NPN 350V 20A | New Jersey Semiconductor |
| 92592 | 2N6654 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 92593 | 2N6654 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SemeLAB |
| 92594 | 2N6654/1 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92595 | 2N6654/2 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92596 | 2N6654/3 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92597 | 2N6654/4 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92598 | 2N6654A | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92599 | 2N6654B | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92600 | 2N6655 | Silicon NPN, High Power, High Voltage Switching Transistor | IPRS Baneasa |
