| 89001 | 2N6425 | Bipolar PNP Device in a Hermetically sealed TO66 Metal Package | SemeLAB |
| 89002 | 2N6426 | Leaded Small Signal Transistor Darlington | Central Semiconductor |
| 89003 | 2N6426 | NPN Darlington Transistor | Fairchild Semiconductor |
| 89004 | 2N6426 | Small Signal Darlington NPN | ON Semiconductor |
| 89005 | 2N6426-D | Darlington Transistors NPN Silicon | ON Semiconductor |
| 89006 | 2N6426RLRA | Small Signal Darlington NPN | ON Semiconductor |
| 89007 | 2N6426_D26Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 89008 | 2N6426_D74Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 89009 | 2N6427 | Leaded Small Signal Transistor Darlington | Central Semiconductor |
| 89010 | 2N6427 | NPN Darlington Transistor | Fairchild Semiconductor |
| 89011 | 2N6427 | Small Signal Darlington NPN | ON Semiconductor |
| 89012 | 2N6427 | NPN Darlington transistor | Philips |
| 89013 | 2N6427 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | Samsung Electronic |
| 89014 | 2N6427RLRA | Small Signal Darlington NPN | ON Semiconductor |
| 89015 | 2N6427_D26Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 89016 | 2N6427_D27Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 89017 | 2N6427_D75Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 89018 | 2N6428 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89019 | 2N6428 | Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve | New Jersey Semiconductor |
|
| 89020 | 2N6428 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 89021 | 2N6428 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 89022 | 2N6428A | Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 | New Jersey Semiconductor |
| 89023 | 2N6428A | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 89024 | 2N6428A | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 89025 | 2N643 | Germanium PNP Transistor | Motorola |
| 89026 | 2N6430 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89027 | 2N6430 | 0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. | Continental Device India Limited |
| 89028 | 2N6430 | Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box | New Jersey Semiconductor |
| 89029 | 2N6431 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89030 | 2N6431 | Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box | New Jersey Semiconductor |
| 89031 | 2N6432 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89032 | 2N6432 | Trans GP BJT PNP 200V 0.1A 3-Pin TO-18 Box | New Jersey Semiconductor |
| 89033 | 2N6433 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89034 | 2N6433 | Trans GP BJT PNP 300V 0.1A 3-Pin TO-18 Box | New Jersey Semiconductor |
| 89035 | 2N6436 | HIGH-POWER PNP SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 89036 | 2N6436 | POWER TRANSISTORS(25A,200W) | MOSPEC Semiconductor |
| 89037 | 2N6436 | Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 89038 | 2N6436 | Silicon PNP Power Transistors TO-3 package | Savantic |
| 89039 | 2N6436A | Silicon PNP Power Transistor | IPRS Baneasa |
| 89040 | 2N6437 | HIGH-POWER PNP SILICON TRANSISTORS | Boca Semiconductor Corporation |
