| 89041 | 2N6437 | POWER TRANSISTORS(25A,200W) | MOSPEC Semiconductor |
| 89042 | 2N6437 | Trans GP BJT PNP 100V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 89043 | 2N6437 | POWER TRANSISTORS PNP SILICON | ON Semiconductor |
| 89044 | 2N6437 | Silicon PNP Power Transistors TO-3 package | Savantic |
| 89045 | 2N6437-D | High-Power PNP Silicon Transistors | ON Semiconductor |
| 89046 | 2N6437A | Silicon PNP Power Transistor | IPRS Baneasa |
| 89047 | 2N6438 | HIGH-POWER PNP SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 89048 | 2N6438 | POWER TRANSISTORS(25A,200W) | MOSPEC Semiconductor |
| 89049 | 2N6438 | Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 89050 | 2N6438 | POWER TRANSISTORS PNP SILICON | ON Semiconductor |
| 89051 | 2N6438 | Silicon PNP Power Transistors TO-3 package | Savantic |
| 89052 | 2N6438A | Silicon PNP Power Transistor | IPRS Baneasa |
| 89053 | 2N6438A | Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 89054 | 2N6439 | 60 W,NPN silicon RF power transistor | MA-Com |
| 89055 | 2N6439 | 60 W, 225 to 400 MHz CONTROLLED °Q± BROADBAND RF POWER TRANSISTOR NPN SILICON | Motorola |
| 89056 | 2N6439 | Trans GP BJT NPN 33V 4-Pin Case 316-01 | New Jersey Semiconductor |
| 89057 | 2N6439 | POWER TRANSISTOR | Tyco Electronics |
| 89058 | 2N644 | Germanium PNP Transistor | Motorola |
| 89059 | 2N6449 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
|
| 89060 | 2N6449 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 89061 | 2N645 | Germanium PNP Transistor | Motorola |
| 89062 | 2N6450 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89063 | 2N6450 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 89064 | 2N6451 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89065 | 2N6451 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 89066 | 2N6452 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89067 | 2N6452 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 89068 | 2N6453 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89069 | 2N6454 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89070 | 2N646 | Germanium NPN Transistor | Motorola |
| 89071 | 2N6461 | Trans GP BJT NPN 300V 0.1A | New Jersey Semiconductor |
| 89072 | 2N6461 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | SemeLAB |
| 89073 | 2N6462 | Trans GP BJT NPN 300V 0.1A | New Jersey Semiconductor |
| 89074 | 2N6462 | Bipolar NPN Device | SemeLAB |
| 89075 | 2N6463 | Trans GP BJT NPN 250V 0.1A | New Jersey Semiconductor |
| 89076 | 2N6463 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | SemeLAB |
| 89077 | 2N6464 | Trans GP BJT NPN 250V 0.1A | New Jersey Semiconductor |
| 89078 | 2N6464 | Bipolar NPN Device | SemeLAB |
| 89079 | 2N6465 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 89080 | 2N6465 | Trans GP BJT NPN 100V 4A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
