| 685081 | HM51S4260ALZ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory | Hitachi Semiconductor |
| 685082 | HM51S4260ALZ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory | Hitachi Semiconductor |
| 685083 | HM51S4260ARR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory | Hitachi Semiconductor |
| 685084 | HM51S4260ARR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory | Hitachi Semiconductor |
| 685085 | HM51S4260ARR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory | Hitachi Semiconductor |
| 685086 | HM51S4260ATT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory | Hitachi Semiconductor |
| 685087 | HM51S4260ATT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory | Hitachi Semiconductor |
| 685088 | HM51S4260ATT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory | Hitachi Semiconductor |
| 685089 | HM51S4260AZ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory | Hitachi Semiconductor |
| 685090 | HM51S4260AZ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory | Hitachi Semiconductor |
| 685091 | HM51S4260AZ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory | Hitachi Semiconductor |
| 685092 | HM51S4260CJ-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory | Hitachi Semiconductor |
| 685093 | HM51S4260CJ-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory | Hitachi Semiconductor |
| 685094 | HM51S4260CJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory | Hitachi Semiconductor |
| 685095 | HM51S4260CJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory | Hitachi Semiconductor |
| 685096 | HM51S4260CLJ-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory | Hitachi Semiconductor |
| 685097 | HM51S4260CLJ-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory | Hitachi Semiconductor |
| 685098 | HM51S4260CLJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory | Hitachi Semiconductor |
| 685099 | HM51S4260CLJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory | Hitachi Semiconductor |
|
| 685100 | HM51S4260CLTT-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory | Hitachi Semiconductor |
| 685101 | HM51S4260CLTT-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory | Hitachi Semiconductor |
| 685102 | HM51S4260CLTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory | Hitachi Semiconductor |
| 685103 | HM51S4260CLTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory | Hitachi Semiconductor |
| 685104 | HM51S4260CTT-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory | Hitachi Semiconductor |
| 685105 | HM51S4260CTT-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory | Hitachi Semiconductor |
| 685106 | HM51S4260CTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory | Hitachi Semiconductor |
| 685107 | HM51S4260CTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory | Hitachi Semiconductor |
| 685108 | HM51S4800AJ-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685109 | HM51S4800AJ-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685110 | HM51S4800ALJ-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685111 | HM51S4800ALJ-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685112 | HM51S4800ALRR-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685113 | HM51S4800ALRR-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685114 | HM51S4800ALTT-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685115 | HM51S4800ALTT-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685116 | HM51S4800ARR-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685117 | HM51S4800ARR-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685118 | HM51S4800ATT-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685119 | HM51S4800ATT-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
| 685120 | HM51S4800CJ-6 | 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory | Hitachi Semiconductor |
