| 685041 | HM5164405FTT-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 685042 | HM5164405FTT-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 685043 | HM5165165F | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685044 | HM5165165FJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685045 | HM5165165FJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685046 | HM5165165FLJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685047 | HM5165165FLJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685048 | HM5165165FLTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685049 | HM5165165FLTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685050 | HM5165165FTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685051 | HM5165165FTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh | Hitachi Semiconductor |
| 685052 | HM5165165J-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 685053 | HM5165165J-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 685054 | HM5165165LJ-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 685055 | HM5165165LJ-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 685056 | HM5165165LTT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 685057 | HM5165165LTT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 685058 | HM5165165TT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 685059 | HM5165165TT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | Hitachi Semiconductor |
|
| 685060 | HM5165405FJ-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 685061 | HM5165405FJ-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 685062 | HM5165405FLJ-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 685063 | HM5165405FLJ-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 685064 | HM5165405FLTT-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 685065 | HM5165405FLTT-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 685066 | HM5165405FTT-5 | 16M x 4-bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 685067 | HM5165405FTT-6 | 16M x 4-bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 685068 | HM51S4260AJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory | Hitachi Semiconductor |
| 685069 | HM51S4260AJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory | Hitachi Semiconductor |
| 685070 | HM51S4260AJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory | Hitachi Semiconductor |
| 685071 | HM51S4260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory | Hitachi Semiconductor |
| 685072 | HM51S4260ALJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory | Hitachi Semiconductor |
| 685073 | HM51S4260ALJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory | Hitachi Semiconductor |
| 685074 | HM51S4260ALRR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory | Hitachi Semiconductor |
| 685075 | HM51S4260ALRR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory | Hitachi Semiconductor |
| 685076 | HM51S4260ALRR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory | Hitachi Semiconductor |
| 685077 | HM51S4260ALTT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory | Hitachi Semiconductor |
| 685078 | HM51S4260ALTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory | Hitachi Semiconductor |
| 685079 | HM51S4260ALTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory | Hitachi Semiconductor |
| 685080 | HM51S4260ALZ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory | Hitachi Semiconductor |
