| 48281 | 1N5529C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. | Jinan Gude Electronic Device |
| 48282 | 1N5529C | Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48283 | 1N5529C-1 | Low Voltage Avalanche Zener | Microsemi |
| 48284 | 1N5529C-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48285 | 1N5529CUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48286 | 1N5529CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48287 | 1N5529D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48288 | 1N5529D | Diode Zener Single 9.1V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48289 | 1N5529D-1 | Low Voltage Avalanche Zener | Microsemi |
| 48290 | 1N5529D-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48291 | 1N5529DUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48292 | 1N5529DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48293 | 1N553 | Rectifier Diode | Motorola |
| 48294 | 1N5530 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48295 | 1N5530 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 48296 | 1N5530 | Low Voltage Avalanche Zener | Microsemi |
| 48297 | 1N5530 | Diode Zener Single 10V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48298 | 1N5530A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 48299 | 1N5530A | Low Voltage Avalanche Zener | Microsemi |
|
| 48300 | 1N5530A | Diode Zener Single 10V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48301 | 1N5530A-1 | Low Voltage Avalanche Zener | Microsemi |
| 48302 | 1N5530A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48303 | 1N5530AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48304 | 1N5530AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48305 | 1N5530B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48306 | 1N5530B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48307 | 1N5530B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 48308 | 1N5530B | Low Voltage Avalanche Zener | Microsemi |
| 48309 | 1N5530B | Low Voltage Avalanche Zener | Microsemi |
| 48310 | 1N5530B | Diode Zener Single 10V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48311 | 1N5530B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 48312 | 1N5530B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48313 | 1N5530B-1 | Low Voltage Avalanche Zener | Microsemi |
| 48314 | 1N5530B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48315 | 1N5530BUR | Zener Voltage Regulator Diode | Microsemi |
| 48316 | 1N5530BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48317 | 1N5530BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48318 | 1N5530C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48319 | 1N5530C | Diode Zener Single 10V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48320 | 1N5530C-1 | Low Voltage Avalanche Zener | Microsemi |
