| 48201 | 1N5527B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48202 | 1N5527B-1 | Low Voltage Avalanche Zener | Microsemi |
| 48203 | 1N5527B-1 | Diode Zener Single 7.5V 5% 500mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48204 | 1N5527B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48205 | 1N5527BUR | Zener Voltage Regulator Diode | Microsemi |
| 48206 | 1N5527BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48207 | 1N5527BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48208 | 1N5527C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48209 | 1N5527C | Diode Zener Single 7.5V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48210 | 1N5527C-1 | Low Voltage Avalanche Zener | Microsemi |
| 48211 | 1N5527C-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48212 | 1N5527CUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48213 | 1N5527CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48214 | 1N5527D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48215 | 1N5527D | Diode Zener Single 7.5V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48216 | 1N5527D-1 | Low Voltage Avalanche Zener | Microsemi |
| 48217 | 1N5527D-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48218 | 1N5527DUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48219 | 1N5527DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
|
| 48220 | 1N5528 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48221 | 1N5528 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 48222 | 1N5528 | Low Voltage Avalanche Zener | Microsemi |
| 48223 | 1N5528 | Diode Zener Single 8.2V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48224 | 1N5528A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 48225 | 1N5528A | Low Voltage Avalanche Zener | Microsemi |
| 48226 | 1N5528A | Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48227 | 1N5528A-1 | Low Voltage Avalanche Zener | Microsemi |
| 48228 | 1N5528A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48229 | 1N5528AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48230 | 1N5528AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48231 | 1N5528B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48232 | 1N5528B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48233 | 1N5528B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 48234 | 1N5528B | Low Voltage Avalanche Zener | Microsemi |
| 48235 | 1N5528B | Low Voltage Avalanche Zener | Microsemi |
| 48236 | 1N5528B | Diode Zener Single 8.2V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48237 | 1N5528B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 48238 | 1N5528B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48239 | 1N5528B-1 | Low Voltage Avalanche Zener | Microsemi |
| 48240 | 1N5528B-1E3 | Low Voltage Avalanche Zener | Microsemi |
