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Datasheets found :: 1675338
Page: << | 6921 | 6922 | 6923 | 6924 | 6925 | 6926 | 6927 | 6928 | 6929 | 6930 | 6931 | >>
No.Part NameDescriptionManufacturer
277001BCR129FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
277002BCR129FE6327Digital Transistors - R1= 10 kOhmInfineon
277003BCR129L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
277004BCR129L3E6327Digital Transistors - R1= 10 kOhmInfineon
277005BCR129SDigital Transistors - R1= 10 kOhm SOT363Infineon
277006BCR129SNPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277007BCR129TDigital Transistors - R1= 10 kOhmInfineon
277008BCR129WSingle digital (complex) AF-Transistors in SOT323 packageInfineon
277009BCR129WE6327Digital Transistors - R1= 10 kOhmInfineon
277010BCR12CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277011BCR12CMTriac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277012BCR12CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277013BCR12CM-12Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277014BCR12CM-12LTriac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277015BCR12CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277016BCR12CM-8Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277017BCR12CM-8LTriac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277018BCR12CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277019BCR12CSMEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors


277020BCR12CS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277021BCR12CS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277022BCR12KM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277023BCR12PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277024BCR12PMIsolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277025BCR12PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277026BCR12PM-12Isolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277027BCR12PM-12LIsolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277028BCR12PM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277029BCR12PM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277030BCR12PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277031BCR12PM-8Isolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277032BCR12PM-8LIsolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
277033BCR12UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
277034BCR133Digital Transistors - R1=10 kOhm; R2=10 kOhmInfineon
277035BCR133NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277036BCR133FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
277037BCR133FE6327Digital Transistors - R1= 10 kOhm ; R2= 10 kOhmInfineon
277038BCR133L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
277039BCR133L3E6327Digital Transistors - R1= 10 kOhm ; R2= 10 kOhmInfineon
277040BCR133SDigital Transistors - R1= 10 kOhm ; R2= 10 kOhm SOT363Infineon


Datasheets found :: 1675338
Page: << | 6921 | 6922 | 6923 | 6924 | 6925 | 6926 | 6927 | 6928 | 6929 | 6930 | 6931 | >>


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