| 277001 | BCR129F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 277002 | BCR129FE6327 | Digital Transistors - R1= 10 kOhm | Infineon |
| 277003 | BCR129L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 277004 | BCR129L3E6327 | Digital Transistors - R1= 10 kOhm | Infineon |
| 277005 | BCR129S | Digital Transistors - R1= 10 kOhm SOT363 | Infineon |
| 277006 | BCR129S | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
| 277007 | BCR129T | Digital Transistors - R1= 10 kOhm | Infineon |
| 277008 | BCR129W | Single digital (complex) AF-Transistors in SOT323 package | Infineon |
| 277009 | BCR129WE6327 | Digital Transistors - R1= 10 kOhm | Infineon |
| 277010 | BCR12CM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 277011 | BCR12CM | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277012 | BCR12CM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277013 | BCR12CM-12 | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277014 | BCR12CM-12L | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277015 | BCR12CM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277016 | BCR12CM-8 | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277017 | BCR12CM-8L | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277018 | BCR12CS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 277019 | BCR12CS | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
|
| 277020 | BCR12CS-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277021 | BCR12CS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277022 | BCR12KM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 277023 | BCR12PM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 277024 | BCR12PM | Isolated Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277025 | BCR12PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277026 | BCR12PM-12 | Isolated Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277027 | BCR12PM-12L | Isolated Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277028 | BCR12PM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 277029 | BCR12PM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277030 | BCR12PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 277031 | BCR12PM-8 | Isolated Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277032 | BCR12PM-8L | Isolated Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 277033 | BCR12UM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 277034 | BCR133 | Digital Transistors - R1=10 kOhm; R2=10 kOhm | Infineon |
| 277035 | BCR133 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
| 277036 | BCR133F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 277037 | BCR133FE6327 | Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm | Infineon |
| 277038 | BCR133L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 277039 | BCR133L3E6327 | Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm | Infineon |
| 277040 | BCR133S | Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm SOT363 | Infineon |
