276881 | BCP69T1-D | PNP Silicon Epitaxial Transistor | ON Semiconductor |
276882 | BCP70 | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) | Siemens |
276883 | BCP70M | PNP Silicon AF Power Transistor | Infineon |
276884 | BCP70M | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) | Siemens |
276885 | BCP71 | NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) | Siemens |
276886 | BCP71M | NPN Silicon AF Power Transistor | Infineon |
276887 | BCP71M | NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) | Siemens |
276888 | BCP72 | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain) | Siemens |
276889 | BCP72M | PNP Silicon AF Power Transistor | Infineon |
276890 | BCP72M | PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) | Siemens |
276891 | BCP75W | 5V and 3.3V, "Half-Brick" 75 Watt, DC/DC Converters | Datel |
276892 | BCR | 20 x 20 Ta2 N Back-Contact on Silicon | Vishay |
276893 | BCR 119 | Single AF Transistors for General Purpose Applications | Infineon |
276894 | BCR 196 | Single digital (complex) AF-Transistors in SOT23 package | Infineon |
276895 | BCR 196W | Single digital (complex) AF-Transistors in SOT323 package | Infineon |
276896 | BCR08AM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
276897 | BCR08AM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
276898 | BCR08AS | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
276899 | BCR08AS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
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276900 | BCR08AS-8 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
276901 | BCR08AS-8 | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
276902 | BCR08PN | Digital Transistors - SOT363 package | Infineon |
276903 | BCR08PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
276904 | BCR10 | NPN/PNP Silicon Digital Transistor Array | Infineon |
276905 | BCR10 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) | Siemens |
276906 | BCR101 | NPN Silicon Digital Transistor | Infineon |
276907 | BCR101F | NPN Silicon Digital Transistor | Infineon |
276908 | BCR101FE6327 | Digital Transistors - R1= 100 kOhm ;R2= 100 kOhm | Infineon |
276909 | BCR101L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
276910 | BCR101L3E6327 | Digital Transistors - R1= 100 kOhm ;R2= 100 kOhm | Infineon |
276911 | BCR101T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
276912 | BCR101TE6327 | Digital Transistors - R1=100kOhm; R2=100kOhm | Infineon |
276913 | BCR103 | NPN Silicon Digital Transistor | Infineon |
276914 | BCR103F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
276915 | BCR103FE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm | Infineon |
276916 | BCR103L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
276917 | BCR103L3E6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm | Infineon |
276918 | BCR103T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
276919 | BCR103TE6327 | Digital Transistors - R1= 2,2kOhm; R2= 2,2kOhm | Infineon |
276920 | BCR103U | NPN Silicon Digital Transistor | Infineon |