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Datasheets found :: 1726161
Page: << | 29497 | 29498 | 29499 | 29500 | 29501 | 29502 | 29503 | 29504 | 29505 | 29506 | 29507 | >>
No.Part NameDescriptionManufacturer
1180041MJE253Trans GP BJT PNP 100V 4A 3-Pin TO-126New Jersey Semiconductor
1180042MJE253Power 4A 100V PNPON Semiconductor
1180043MJE254COMPLEMENTARY SILICON POWER TRANSISTORSCentral Semiconductor
1180044MJE254COMPLEMENTARY SILICON POWER TRANSISTORSCentral Semiconductor
1180045MJE254Trans GP BJT PNP 100V 4A 3-Pin TO-126New Jersey Semiconductor
1180046MJE270 15.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 500 hFE.Continental Device India Limited
1180047MJE2702.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTSMotorola
1180048MJE270Power 2A 100V NPN ComplementaryON Semiconductor
1180049MJE270Power 2A 100V NPN ComplementaryON Semiconductor
1180050MJE270-DComplementary Silicon Power Transistors NPNON Semiconductor
1180051MJE2712.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTSMotorola
1180052MJE271Power 2A 100V PNPON Semiconductor
1180053MJE271Power 2A 100V PNPON Semiconductor
1180054MJE2801POWER TRANSISTORS(10A /60V /75W)MOSPEC Semiconductor
1180055MJE280110 Ampere High-Power NPN Silicon Transistor 60V 90W complementary to PNP MJE2901Motorola
1180056MJE2801BJTNew Jersey Semiconductor
1180057MJE2801TLeaded Power Transistor General PurposeCentral Semiconductor
1180058MJE2801TPOWER TRANSISTORS(10A,60V,75W)MOSPEC Semiconductor
1180059MJE2801TBJTNew Jersey Semiconductor


1180060MJE290110 Ampere High-Power PNP Silicon Transistor 60V 90W complementary to NPN MJE2801Motorola
1180061MJE2901TLeaded Power Transistor General PurposeCentral Semiconductor
1180062MJE2901TPOWER TRANSISTORS(10A,60V,75W)MOSPEC Semiconductor
1180063MJE2901TBJTNew Jersey Semiconductor
1180064MJE2955TO-220 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
1180065MJE2955POWER TRANSISTORS(10A,60V,75W)MOSPEC Semiconductor
1180066MJE295510 Ampere PNP Silicon Power Transistor 60 Volts, 90 Watts, complement to MJE3055Motorola
1180067MJE2955-GGeneral Purpose Transistor, VCBO=-70V, VCEO=-60V, VEBO=-5V, IC=-10AComchip Technology
1180068MJE2955TLeaded Power Transistor General PurposeCentral Semiconductor
1180069MJE2955T 75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 10.000A Ic, 5 hFE.Continental Device India Limited
1180070MJE2955TPNP Silicon TransistorFairchild Semiconductor
1180071MJE2955TPOWER TRANSISTORS(10A,60V,75W)MOSPEC Semiconductor
1180072MJE2955T10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTSMotorola
1180073MJE2955TTrans GP BJT PNP 60V 10A 3-Pin(3+Tab) TO-220 BoxNew Jersey Semiconductor
1180074MJE2955TPower 10A 60V Discrete PNPON Semiconductor
1180075MJE2955T-70 V, -10 A, PNP silicon transistorSamsung Electronic
1180076MJE2955TSilicon PNP Power Transistors TO-220 packageSavantic
1180077MJE2955TCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1180078MJE2955TCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1180079MJE2955TCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1180080MJE2955TPNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.USHA India LTD


Datasheets found :: 1726161
Page: << | 29497 | 29498 | 29499 | 29500 | 29501 | 29502 | 29503 | 29504 | 29505 | 29506 | 29507 | >>


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