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Datasheets found :: 1726161
Page: << | 29493 | 29494 | 29495 | 29496 | 29497 | 29498 | 29499 | 29500 | 29501 | 29502 | 29503 | >>
No.Part NameDescriptionManufacturer
1179881MJE1723 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTSMotorola
1179882MJE172Trans GP BJT PNP 80V 3A 3-Pin TO-126 BoxNew Jersey Semiconductor
1179883MJE172Power 3A 80V PNPON Semiconductor
1179884MJE172-100 V, -1 A, PNP epitaxial silicon transistorSamsung Electronic
1179885MJE172Silicon PNP Power Transistors TO-126 packageSavantic
1179886MJE172COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1179887MJE172COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1179888MJE172COMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1179889MJE172STUPNP Epitaxial Silicon TransistorFairchild Semiconductor
1179890MJE180Leaded Power Transistor General PurposeCentral Semiconductor
1179891MJE180 12.500W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50 - 250 hFE.Continental Device India Limited
1179892MJE180NPN Epitaxial Silicon TransistorFairchild Semiconductor
1179893MJE180POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor
1179894MJE180Trans GP BJT NPN 40V 3A 3-Pin TO-126 BoxNew Jersey Semiconductor
1179895MJE18060 V, 3 A, NPN epitaxial silicon transistorSamsung Electronic
1179896MJE180Silicon NPN Power Transistors TO-126 packageSavantic
1179897MJE18002POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTSMotorola
1179898MJE18002Switchmode™ON Semiconductor
1179899MJE18002Silicon NPN Power Transistors TO-220 packageSavantic


1179900MJE18002-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1179901MJE18002D2POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTSMotorola
1179902MJE18002D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation NetworkON Semiconductor
1179903MJE18002D2-DHigh Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTSON Semiconductor
1179904MJE18004POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTSMotorola
1179905MJE18004Trans GP BJT NPN 450V 5A 3-Pin(3+Tab) TO-220AB RailNew Jersey Semiconductor
1179906MJE18004Switchmode™ON Semiconductor
1179907MJE18004Switchmode™ON Semiconductor
1179908MJE18004Silicon NPN Power Transistors TO-220 packageSavantic
1179909MJE18004-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1179910MJE18004D2POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSMotorola
1179911MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...ON Semiconductor
1179912MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...ON Semiconductor
1179913MJE18004D2-DHigh Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSON Semiconductor
1179914MJE18006POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTSMotorola
1179915MJE18006Trans GP BJT NPN 450V 6A 3-Pin(3+Tab) TO-220AB RailNew Jersey Semiconductor
1179916MJE18006Power 8A 450V NPNON Semiconductor
1179917MJE18006Silicon NPN Power Transistors TO-220C packageSavantic
1179918MJE18006-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1179919MJE18008POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTSMotorola
1179920MJE18008Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB RailNew Jersey Semiconductor


Datasheets found :: 1726161
Page: << | 29493 | 29494 | 29495 | 29496 | 29497 | 29498 | 29499 | 29500 | 29501 | 29502 | 29503 | >>


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