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2N5308A manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
General Electric Solid StatePlanar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA.

Others with the same file for datasheet:
2N5307, GES5307, GES5308, GES5308A
Download 2N5308A datasheet from
General Electric Solid State
pdf
 136 kb 
2N5308View 2N5308A to our catalog2N5308_D26Z



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