| 758481 | K152XXX | Leaded Ceramic Multilayer Capacitors | Vishay |
| 758482 | K1536BLC | LOW COST SURFACE MOUNT VCXOS | etc |
| 758483 | K1536BLCM | LOW COST SURFACE MOUNT VCXOS | etc |
| 758484 | K164 | Temperaturmessung Bedrahtete Scheiben | Siemens |
| 758485 | K170 | Low EMI Clock Generator | Integrated Circuit Systems |
| 758486 | K170 | LOW VOLTAGE OPERATIONAL AMPLIFIER | TOKO |
| 758487 | K1713 | Two-color detector | Hamamatsu Corporation |
| 758488 | K1713-01 | Two-color detector | Hamamatsu Corporation |
| 758489 | K1713-02 | Two-color detector | Hamamatsu Corporation |
| 758490 | K1713-05 | Two-color detector | Hamamatsu Corporation |
| 758491 | K1713-08 | Two-color detector | Hamamatsu Corporation |
| 758492 | K1713-09 | Two-color detector | Hamamatsu Corporation |
| 758493 | K1745 | 2SK1745 | Unknow |
| 758494 | K176 | MOS-Intergrated Microcircuits | etc |
| 758495 | K176TB1 | MOS-Intergrated Microcircuits | etc |
| 758496 | K176TM1 | MOS-Intergrated Microcircuits | etc |
| 758497 | K176TM2 | MOS-Intergrated Microcircuits | etc |
| 758498 | K179 | Silicon Piezoresistive Absolute Pressure Sensor | Siemens |
| 758499 | K180 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE | Knox Semiconductor Inc |
|
| 758500 | K1B6416B6C | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory | Samsung Electronic |
| 758501 | K1S161611A | 1Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758502 | K1S161611A-I | 1Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758503 | K1S16161CA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758504 | K1S16161CA-I | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758505 | K1S1616BCA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758506 | K1S321611C | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758507 | K1S321611C-FI70 | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758508 | K1S321611C-I | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758509 | K1S321615M | 2M x 16 bit Uni-Transistor CMOS RAM Data Sheet | Samsung Electronic |
| 758510 | K1S32161CC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758511 | K1S32161CC-FI70 | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758512 | K1S32161CC-I | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758513 | K1S3216B1C | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758514 | K1S3216B1C-I | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung Electronic |
| 758515 | K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758516 | K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung Electronic |
| 758517 | K1V(A)10 | Sidac / Bi-directional Thyristor (K1VSeries) | Shindengen |
| 758518 | K1V(A)11 | Sidac / Bi-directional Thyristor (K1VSeries) | Shindengen |
| 758519 | K1V(A)12 | Sidac / Bi-directional Thyristor (K1VSeries) | Shindengen |
| 758520 | K1V(A)14 | Sidac / Bi-directional Thyristor (K1VSeries) | Shindengen |
