| 758561 | K2000S | silicon bilateral voltage triggered switch | Teccor Electronics |
| 758562 | K201 | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) | Kodenshi Corp |
| 758563 | K201 | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) | Kondenshi Corp |
| 758564 | K2010 | Photo Coupler, Transistor output | Cosmo Electronics |
| 758565 | K2010A | High reliability photocoupler, isolation 5000V, CTR=60 to 160% | Cosmo Electronics |
| 758566 | K2010B | High reliability photocoupler, isolation 5000V, CTR=130 to 260% | Cosmo Electronics |
| 758567 | K2010C | High reliability photocoupler, isolation 5000V, CTR=200 to 400% | Cosmo Electronics |
| 758568 | K2010D | High reliability photocoupler, isolation 5000V, CTR=300 to 600% | Cosmo Electronics |
| 758569 | K2010E | High reliability photocoupler, isolation 5000V, CTR=60 to 600% | Cosmo Electronics |
| 758570 | K2011 | IF filter for intercarrier application (IF= 38.0 MHz. standard B/G-CCIR, D/K-OIRT) | etc |
| 758571 | K202 | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) | Kodenshi Corp |
| 758572 | K202 | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) | Kondenshi Corp |
| 758573 | K204 | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) | Kodenshi Corp |
| 758574 | K204 | Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) | Kondenshi Corp |
| 758575 | K210 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE | Knox Semiconductor Inc |
| 758576 | K21100B1EB1 | Single Phase Bridge | Microsemi |
| 758577 | K21100Z1EB1 | 3 Phase Bridge | Microsemi |
| 758578 | K21120B1EB1 | Single Phase Bridge | Microsemi |
| 758579 | K21120Z1EB1 | 3 Phase Bridge | Microsemi |
|
| 758580 | K21160B1EB1 | Single Phase Bridge | Microsemi |
| 758581 | K21160Z1EB1 | 3 Phase Bridge | Microsemi |
| 758582 | K2120B1EB1 | Single Phase Bridge | Microsemi |
| 758583 | K2120Z1EB1 | 3 Phase Bridge | Microsemi |
| 758584 | K2139 | MOS Field Effect Transistor | NEC |
| 758585 | K214 | Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage | Knox Semiconductor Inc |
| 758586 | K2140B1EB1 | Single Phase Bridge | Microsemi |
| 758587 | K2140Z1EB1 | 3 Phase Bridge | Microsemi |
| 758588 | K2141 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 758589 | K2160B1EB1 | Single Phase Bridge | Microsemi |
| 758590 | K2160Z1EB1 | 3 Phase Bridge | Microsemi |
| 758591 | K2180B1EB1 | Single Phase Bridge | Microsemi |
| 758592 | K2180Z1EB1 | 3 Phase Bridge | Microsemi |
| 758593 | K220 | Silicon Bilateral Voltage Triggered Switch | Ceramate |
| 758594 | K2200E70 | silicon bilateral voltage triggered switch | Teccor Electronics |
| 758595 | K2200F1 | silicon bilateral voltage triggered switch | Teccor Electronics |
| 758596 | K2200G | silicon bilateral voltage triggered switch | Teccor Electronics |
| 758597 | K2200S | silicon bilateral voltage triggered switch | Teccor Electronics |
| 758598 | K240 | Silicon bilateral voltage triggered switch. Breakover voltage 220V (min) to 250V (max). | Ceramate |
| 758599 | K240 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE | Knox Semiconductor Inc |
| 758600 | K2400E70 | silicon bilateral voltage triggered switch | Teccor Electronics |
