| 66881 | 2N4119 | N-Channel silicon junction field-effect transistor | InterFET Corporation |
| 66882 | 2N4119 | ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET | Linear Systems |
| 66883 | 2N4119 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 66884 | 2N4119A | N-Channel JFET General Purpose Amplifier | Calogic |
| 66885 | 2N4119A | N-Channel silicon junction field-effect transistor | InterFET Corporation |
| 66886 | 2N4119A | Ultra High Input Impedance N-Channel JFET Amplifier | Linear Systems |
| 66887 | 2N4119A | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 66888 | 2N4119A | Ultra Low Leakage, N-Channel JFETs | Vishay |
| 66889 | 2N4123 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66890 | 2N4123 | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66891 | 2N4123 | Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. | General Electric Solid State |
| 66892 | 2N4123 | Ic=200mA, Vce=1.0V transistor | MCC |
| 66893 | 2N4123 | NPN Silicon General Purpose Transistor 625mW | Micro Commercial Components |
| 66894 | 2N4123 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| 66895 | 2N4123 | General Purpose Transistors(NPN Silicon) | ON Semiconductor |
| 66896 | 2N4123 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 66897 | 2N4123 | General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 66898 | 2N4123-D | General Purpose Transistors NPN Silicon | ON Semiconductor |
| 66899 | 2N4123BU | NPN General Purpose Amplifier | Fairchild Semiconductor |
|
| 66900 | 2N4123RLRA | General Purpose Transistor - NPN | ON Semiconductor |
| 66901 | 2N4123RLRM | General Purpose Transistor - NPN | ON Semiconductor |
| 66902 | 2N4123TA | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66903 | 2N4123TAR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66904 | 2N4123TF | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66905 | 2N4123TFR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66906 | 2N4124 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66907 | 2N4124 | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66908 | 2N4124 | Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. | General Electric Solid State |
| 66909 | 2N4124 | Small Signal Transistors (NPN) | General Semiconductor |
| 66910 | 2N4124 | Ic=200mA, Vce=1.0V transistor | MCC |
| 66911 | 2N4124 | NPN Silicon General Purpose Transistor 625mW | Micro Commercial Components |
| 66912 | 2N4124 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| 66913 | 2N4124 | Trans GP BJT NPN 25V 0.2A 3-Pin TO-92 Box | New Jersey Semiconductor |
| 66914 | 2N4124 | General Purpose Transistor - NPN | ON Semiconductor |
| 66915 | 2N4124 | NPN general purpose transistor | Philips |
| 66916 | 2N4124 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 66917 | 2N4124 | 25 V, NPN small signal transistor | TRANSYS Electronics Limited |
| 66918 | 2N4124 | NPN SMALL SIGNAL TRANSISTOR | TRSYS |
| 66919 | 2N4124 | General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 66920 | 2N4124 | Small Signal Transistor (NPN) | Vishay |
