| 66881 | 2N3904TFR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66882 | 2N3904U | Switching Transistor | Korea Electronics (KEC) |
| 66883 | 2N3904ZL1 | General Purpose Transistors | ON Semiconductor |
| 66884 | 2N3904ZL1 | General Purpose Transistors | ON Semiconductor |
| 66885 | 2N3904_D10Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66886 | 2N3904_D28Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66887 | 2N3904_D81Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66888 | 2N3904_J05Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66889 | 2N3904_J18Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66890 | 2N3904_J25Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66891 | 2N3904_J61Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66892 | 2N3905 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66893 | 2N3905 | 0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE | Continental Device India Limited |
| 66894 | 2N3905 | Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 66895 | 2N3905 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66896 | 2N3905 | Planar epitaxial PNP silicon transistor. -40V, 200mA. | General Electric Solid State |
| 66897 | 2N3905 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 66898 | 2N3905 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
| 66899 | 2N3905 | General Purpose Transistors(PNP Silicon) | ON Semiconductor |
|
| 66900 | 2N3905 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 66901 | 2N3905 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 66902 | 2N3905 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | USHA India LTD |
| 66903 | 2N3905-D | General Purpose Transistors PNP Silicon | ON Semiconductor |
| 66904 | 2N3905BU | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66905 | 2N3905TA | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66906 | 2N3905TAR | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66907 | 2N3905TF | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66908 | 2N3905TFR | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66909 | 2N3906 | PNP Silicon Transistor (General small signal application Switching application) | AUK Corp |
| 66910 | 2N3906 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66911 | 2N3906 | 0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE | Continental Device India Limited |
| 66912 | 2N3906 | Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 66913 | 2N3906 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 66914 | 2N3906 | Planar epitaxial PNP silicon transistor. -40V, 200mA. | General Electric Solid State |
| 66915 | 2N3906 | SMALL SIGNAL TRANSISTORS (PNP) | General Semiconductor |
| 66916 | 2N3906 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 66917 | 2N3906 | Switching Transistor | Korea Electronics (KEC) |
| 66918 | 2N3906 | Vce=1.0V transistor | MCC |
| 66919 | 2N3906 | PNP General Purpose Amplifier | Micro Commercial Components |
| 66920 | 2N3906 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
