| 66801 | 2N3897 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 66802 | 2N3897 | Thyristor | New Jersey Semiconductor |
| 66803 | 2N3898 | 35A silicon controlled rectifier. Vrsom(non-rep) 660V. | General Electric Solid State |
| 66804 | 2N3898 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 66805 | 2N3898 | Thyristor | New Jersey Semiconductor |
| 66806 | 2N3899 | 35A silicon controlled rectifier. Vrsom(non-rep) 700V. | General Electric Solid State |
| 66807 | 2N3899 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 66808 | 2N3899 | Thyristor | New Jersey Semiconductor |
| 66809 | 2N389A | Thyristor | New Jersey Semiconductor |
| 66810 | 2N3902 | HIGH VOLTAGE NPN SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 66811 | 2N3902 | NPN Transistor | Microsemi |
| 66812 | 2N3902 | Trans GP BJT NPN 400V 3.5A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 66813 | 2N3903 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66814 | 2N3903 | 0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE | Continental Device India Limited |
| 66815 | 2N3903 | Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 66816 | 2N3903 | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66817 | 2N3903 | Planar epitaxial NPN silicon transistor. 40V, 200mA. | General Electric Solid State |
| 66818 | 2N3903 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 66819 | 2N3903 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
|
| 66820 | 2N3903 | General Purpose Transistors(NPN Silicon) | ON Semiconductor |
| 66821 | 2N3903 | npn epitaxial silicon transistor | Samsung Electronic |
| 66822 | 2N3903 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 66823 | 2N3903 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 66824 | 2N3903-D | General Purpose Transistors NPN Silicon | ON Semiconductor |
| 66825 | 2N3903RLRM | General Purpose Transistors | ON Semiconductor |
| 66826 | 2N3903_D26Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66827 | 2N3903_D27Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66828 | 2N3903_D74Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66829 | 2N3904 | NPN Silicon Transistor (General small signal application) | AUK Corp |
| 66830 | 2N3904 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 66831 | 2N3904 | 0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE | Continental Device India Limited |
| 66832 | 2N3904 | Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 66833 | 2N3904 | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 66834 | 2N3904 | Planar epitaxial NPN silicon transistor. 40V, 200mA. | General Electric Solid State |
| 66835 | 2N3904 | SMALL SIGNAL TRANSISTORS (NPN) | General Semiconductor |
| 66836 | 2N3904 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 66837 | 2N3904 | Switching Transistor | Korea Electronics (KEC) |
| 66838 | 2N3904 | Vce=1.0V transistor | MCC |
| 66839 | 2N3904 | NPN General Purpose Amplifier | Micro Commercial Components |
| 66840 | 2N3904 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
