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Datasheets found :: 1567829
Page: << | 25832 | 25833 | 25834 | 25835 | 25836 | 25837 | 25838 | 25839 | 25840 | 25841 | 25842 | >>
No.Part NameDescriptionManufacturer
1033441MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...ON Semiconductor
1033442MJE18004D2-DHigh Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSON Semiconductor
1033443MJE18006POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTSMotorola
1033444MJE18006Trans GP BJT NPN 450V 6A 3-Pin(3+Tab) TO-220AB RailNew Jersey Semiconductor
1033445MJE18006Power 8A 450V NPNON Semiconductor
1033446MJE18006Silicon NPN Power Transistors TO-220C packageSavantic
1033447MJE18006-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1033448MJE18008POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTSMotorola
1033449MJE18008Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB RailNew Jersey Semiconductor
1033450MJE18008SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1033451MJE18008Silicon NPN Power Transistors TO-220C packageSavantic
1033452MJE18008-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1033453MJE18009POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTSMotorola
1033454MJE18009-DSWITCHMODE NPN Silicon Planar Power TransistorON Semiconductor
1033455MJE180STUNPN Epitaxial Silicon TransistorFairchild Semiconductor
1033456MJE181Leaded Power Transistor General PurposeCentral Semiconductor
1033457MJE181 12.500W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE.Continental Device India Limited
1033458MJE181NPN Epitaxial Silicon TransistorFairchild Semiconductor
1033459MJE181POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor


1033460MJE1813 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTSMotorola
1033461MJE181Trans GP BJT NPN 60V 3A 3-Pin TO-126 BoxNew Jersey Semiconductor
1033462MJE181Power 3A 60V NPNON Semiconductor
1033463MJE18160 V, 3 A, NPN epitaxial silicon transistorSamsung Electronic
1033464MJE181Silicon NPN Power Transistors TO-126 packageSavantic
1033465MJE181STUNPN Epitaxial Silicon TransistorFairchild Semiconductor
1033466MJE182Leaded Power Transistor General PurposeCentral Semiconductor
1033467MJE182 12.500W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE.Continental Device India Limited
1033468MJE182NPN Epitaxial Silicon TransistorFairchild Semiconductor
1033469MJE182POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor
1033470MJE1823 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTSMotorola
1033471MJE182Trans GP BJT NPN 80V 3A 3-Pin TO-126 BoxNew Jersey Semiconductor
1033472MJE182Power 3A 80V NPNON Semiconductor
1033473MJE18260 V, 3 A, NPN epitaxial silicon transistorSamsung Electronic
1033474MJE182Silicon NPN Power Transistors TO-126 packageSavantic
1033475MJE182COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1033476MJE182COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1033477MJE182COMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1033478MJE18204POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTSMotorola
1033479MJE18204SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply ApplicationsON Semiconductor
1033480MJE18204-DSWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTSON Semiconductor


Datasheets found :: 1567829
Page: << | 25832 | 25833 | 25834 | 25835 | 25836 | 25837 | 25838 | 25839 | 25840 | 25841 | 25842 | >>

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