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Datasheets found :: 1567829
Page: << | 25831 | 25832 | 25833 | 25834 | 25835 | 25836 | 25837 | 25838 | 25839 | 25840 | 25841 | >>
No.Part NameDescriptionManufacturer
1033401MJE171Power 3A 60V PNPON Semiconductor
1033402MJE171-80 V, -1 A, PNP epitaxial silicon transistorSamsung Electronic
1033403MJE171Silicon PNP Power Transistors TO-126 packageSavantic
1033404MJE171-DComplementary Plastic Silicon Power Transistors NPNON Semiconductor
1033405MJE171STUPNP Epitaxial Silicon TransistorFairchild Semiconductor
1033406MJE172Leaded Power Transistor General PurposeCentral Semiconductor
1033407MJE172 12.500W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE.Continental Device India Limited
1033408MJE172PNP Epitaxial Silicon TransistorFairchild Semiconductor
1033409MJE172POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor
1033410MJE1723 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTSMotorola
1033411MJE172Trans GP BJT PNP 80V 3A 3-Pin TO-126 BoxNew Jersey Semiconductor
1033412MJE172Power 3A 80V PNPON Semiconductor
1033413MJE172-100 V, -1 A, PNP epitaxial silicon transistorSamsung Electronic
1033414MJE172Silicon PNP Power Transistors TO-126 packageSavantic
1033415MJE172COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1033416MJE172COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1033417MJE172COMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1033418MJE172STUPNP Epitaxial Silicon TransistorFairchild Semiconductor
1033419MJE180Leaded Power Transistor General PurposeCentral Semiconductor


1033420MJE180 12.500W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50 - 250 hFE.Continental Device India Limited
1033421MJE180NPN Epitaxial Silicon TransistorFairchild Semiconductor
1033422MJE180POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor
1033423MJE180Trans GP BJT NPN 40V 3A 3-Pin TO-126 BoxNew Jersey Semiconductor
1033424MJE18060 V, 3 A, NPN epitaxial silicon transistorSamsung Electronic
1033425MJE180Silicon NPN Power Transistors TO-126 packageSavantic
1033426MJE18002POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTSMotorola
1033427MJE18002Switchmode™ON Semiconductor
1033428MJE18002Silicon NPN Power Transistors TO-220 packageSavantic
1033429MJE18002-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1033430MJE18002D2POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTSMotorola
1033431MJE18002D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation NetworkON Semiconductor
1033432MJE18002D2-DHigh Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTSON Semiconductor
1033433MJE18004POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTSMotorola
1033434MJE18004Trans GP BJT NPN 450V 5A 3-Pin(3+Tab) TO-220AB RailNew Jersey Semiconductor
1033435MJE18004Switchmode™ON Semiconductor
1033436MJE18004Switchmode™ON Semiconductor
1033437MJE18004Silicon NPN Power Transistors TO-220 packageSavantic
1033438MJE18004-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
1033439MJE18004D2POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSMotorola
1033440MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...ON Semiconductor


Datasheets found :: 1567829
Page: << | 25831 | 25832 | 25833 | 25834 | 25835 | 25836 | 25837 | 25838 | 25839 | 25840 | 25841 | >>

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