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Siemens

Datasheet Catalog - Page 26

Datasheets found :: 10939Page: | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 | 30 | 31 |
No.Part NameDescription
2501BFX89NPN Transistor for antenna amplifiers
2502BFX89NPN Transistor
2503BFX89NPN Transistor industrial type
2504BFX89NPN SILICON TRANSISTOR FOR RF BROADBAND AMPLIFIER
2505BFY180HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
2506BFY180ESHiRel NPN silicon RF transistor
2507BFY180HHiRel NPN silicon RF transistor
2508BFY180PHiRel NPN silicon RF transistor
2509BFY180SHiRel NPN silicon RF transistor
2510BFY181HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
2511BFY181ESHiRel NPN silicon RF transistor
2512BFY181HHiRel NPN silicon RF transistor


2513BFY181PHiRel NPN silicon RF transistor
2514BFY181SHiRel NPN silicon RF transistor
2515BFY182HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
2516BFY182ESHiRel NPN silicon RF transistor
2517BFY182HHiRel NPN silicon RF transistor
2518BFY182PHiRel NPN silicon RF transistor
2519BFY182SHiRel NPN silicon RF transistor
2520BFY183HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
2521BFY183ESHiRel NPN silicon RF transistor
2522BFY183HHiRel NPN silicon RF transistor
2523BFY183PHiRel NPN silicon RF transistor
2524BFY183SHiRel NPN silicon RF transistor
2525BFY193HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)
2526BFY193ESHiRel NPN silicon RF transistor
2527BFY193HHiRel NPN silicon RF transistor
2528BFY193PHiRel NPN silicon RF transistor
2529BFY193SHiRel NPN silicon RF transistor
2530BFY196HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
2531BFY196HHiRel NPN silicon RF transistor
2532BFY196PHiRel NPN silicon RF transistor
2533BFY196SHiRel NPN silicon RF transistor
2534BFY280HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
2535BFY280ESHiRel NPN silicon RF transistor
2536BFY280HHiRel NPN silicon RF transistor
2537BFY280PHiRel NPN silicon RF transistor
2538BFY280SHiRel NPN silicon RF transistor
2539BFY33NPN Transistor industrial type
2540BFY34NPN Transistor industrial type
2541BFY45NPN Transistor industrial type
2542BFY46NPN Transistor industrial type
2543BFY90NPN Transistor
2544BFY90NPN Transistor for antenna amplifiers
2545BFY90NPN Transistor industrial type
2546BGA310Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
2547BGA312Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
2548BGA318Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
2549BGA420Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ¥Ø-gain block Unconditionally stable)
2550BGA425Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 ¥Ø block LNA / MIX Unconditionally stable)
2551BGA427Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)
2552BGX13F-2HIMPATT Diode
2553BGX50ASilicon Switching Diode Array (Bridge configuration High-speed switch diode chip)
2554BGY12IMPATT Diode
2555BGY12Avalanche transit time diodes for the C and X bands, datasheet in german language
2556BGY12AAvalanche transit time diodes for the C and X bands, datasheet in german language
2557BGY12BAvalanche transit time diodes for the C and X bands, datasheet in german language
2558BGY12D-1FIMPATT Diode
2559BGY12D-1FAvalanche (IMPATT) diode for generation and amplification of microwave-power
2560BGY12E-1GIMPATT Diode
2561BGY12E-1GAvalanche (IMPATT) diode for generation and amplification of microwave-power
2562BGY12F-2HIMPATT Diode
2563BGY12F-2HAvalanche (IMPATT) diode for generation and amplification of microwave-power
2564BGY12F-2IAvalanche (IMPATT) diode for generation and amplification of microwave-power
2565BGY12F-2JIMPATT Diode
2566BGY13IMPATT Diode
2567BGY13Avalanche transit time diodes for the C and X bands, datasheet in german language
2568BGY13AAvalanche transit time diodes for the C and X bands, datasheet in german language
2569BGY13BAvalanche transit time diodes for the C and X bands, datasheet in german language
2570BGY13D-1EIMPATT Diode
2571BGY13D-1EAvalanche (IMPATT) diode for generation and amplification of microwave-power
2572BGY13E-1FIMPATT Diode
2573BGY13E-1FAvalanche (IMPATT) diode for generation and amplification of microwave-power
2574BGY13F-2HAvalanche (IMPATT) diode for generation and amplification of microwave-power
2575BGY13FA-1GIMPATT Diode
2576BGY13FA-1GAvalanche (IMPATT) diode for generation and amplification of microwave-power
2577BGY14IMPATT Diode
2578BGY14Avalanche transit time diodes for the C and X bands, datasheet in german language
2579BGY14AAvalanche transit time diodes for the C and X bands, datasheet in german language
2580BGY14BAvalanche transit time diodes for the C and X bands, datasheet in german language
2581BGY14D-1EIMPATT Diode
2582BGY14D-1EAvalanche (IMPATT) diode for generation and amplification of microwave-power
2583BGY14E-1FIMPATT Diode
2584BGY14E-1FAvalanche (IMPATT) diode for generation and amplification of microwave-power
2585BGY14FA-1GIMPATT Diode
2586BGY14FA1GAvalanche (IMPATT) diode for generation and amplification of microwave-power
2587BGY26IMPATT Diode
2588BGY26D-1EIMPATT Diode
2589BGY26D-1EAvalanche (IMPATT) diode for generation and amplification of microwave-power
2590BGY26E-1FIMPATT Diode
2591BGY26E-1FAvalanche (IMPATT) diode for generation and amplification of microwave-power
2592BGY26FA-1GIMPATT Diode
2593BGY26FA-1GAvalanche (IMPATT) diode for generation and amplification of microwave-power
2594BGY27IMPATT Diode
2595BGY27DA-1DIMPATT Diode
2596BGY27DA-1DAvalanche (IMPATT) diode for generation and amplification of microwave-power
2597BGY27DB-1EIMPATT Diode
2598BGY27DB-1EAvalanche (IMPATT) diode for generation and amplification of microwave-power
2599BGY27E-1FIMPATT Diode
2600BGY27E-1FAvalanche (IMPATT) diode for generation and amplification of microwave-power


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