| No. | Part Name | Description |
|---|
| 251 | 2N5921 | 5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
| 252 | 2N5995 | 7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
| 253 | 2N6093 | 75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
| 254 | 2N6104 | Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
| 255 | 2N6104 | 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
| 256 | 2N6105 | 60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
| 257 | 2N6105 | Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
| 258 | 2N6105 | Hotspotting in RF Power Transistors - Application Note |
| 259 | 2N6105 | 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
| 260 | 2N6265 | 2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
| 261 | 2N6266 | 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
| 262 | 2N6266 | 5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
| 263 | 2N6267 | 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
| 264 | 2N6267 | 10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
| 265 | 2N6268 | 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
| 266 | 2N6269 | 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
| 267 | 2N6389 | UHF/MATV Low-Noise Silicon NPN RF transistor |
| 268 | 2N6390 | 2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
| 269 | 2N6391 | 5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
| 270 | 2N6392 | 10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
| 271 | 2N6393 | 10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
| 272 | 2N681 | Thyristor Controlled-rectifier |
| 273 | 2N682 | Thyristor Controlled-rectifier |
| 274 | 2N683 | Thyristor Controlled-rectifier |
| 275 | 2N684 | Thyristor Controlled-rectifier |
| 276 | 2N685 | Thyristor Controlled-rectifier |
| 277 | 2N686 | Thyristor Controlled-rectifier |
| 278 | 2N687 | Thyristor Controlled-rectifier |
| 279 | 2N688 | Thyristor Controlled-rectifier |
| 280 | 2N689 | Thyristor Controlled-rectifier |
| 281 | 2N690 | Thyristor Controlled-rectifier |
| 282 | 2N918 | Silicon NPN Epitaxial Planar VHF Transistor |
| 283 | 3N128 | MOS Field-Effect Transistor N-Channel |
| 284 | 3N138 | MOS Field-Effect Transistor N-Channel |
| 285 | 3N139 | MOS Field-Effect Transistor N-Channel |
| 286 | 3N140 | MOS Field-Effect Transistor N-Channel Depletion Type |
| 287 | 3N141 | MOS Field-Effect Transistor N-Channel Depletion Type |
| 288 | 3N142 | MOS Field-Effect Transistor N-Channel Depletion Type |
| 289 | 3N143 | MOS Field-Effect Transistor N-Channel |
| 290 | 3N152 | MOS Field-Effect Transistor N-Channel Depletion Type |
| 291 | 3N153 | MOS Field-Effect Transistor N-Channel Depletion Type |
| 292 | 3N154 | MOS Field-Effect Transistor N-Channel Depletion Type |
| 293 | 3N159 | MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
| 294 | 3N187 | MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
| 295 | 3N200 | MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
| 296 | 40080 | Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
| 297 | 40081 | Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
| 298 | 40082 | Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
| 299 | 40280 | 175MHz Overlay Silicon NPN RF Power Transistor |
| 300 | 40281 | 175MHz Overlay Silicon NPN RF Power Transistor |
| | |
