|   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   G45A


Motorola

Datasheet Catalog - Page 327

Datasheets found :: 39563Page: | 322 | 323 | 324 | 325 | 326 | 327 | 328 | 329 | 330 | 331 | 332 |
No.Part NameDescription
32601MDA970-14Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 50V
32602MDA970-24Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 100V
32603MDA970-34Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 200V
32604MDA972-1Single-Phase Full-Wave Bridge 16 AMPS 50V DC
32605MDA972-2Single-Phase Full-Wave Bridge 16 AMPS 100V DC
32606MDA972-3Single-Phase Full-Wave Bridge 16 AMPS 200V DC
32607MDA972-4Single-Phase Full-Wave Bridge 16 AMPS 300V DC
32608MDA972-5Single-Phase Full-Wave Bridge 16 AMPS 400V DC
32609MDA980-1Single-Phase Full-Wave Bridge 12A 50V
32610MDA980-2Single-Phase Full-Wave Bridge 12A 100V
32611MDA980-3Single-Phase Full-Wave Bridge 12A 200V
32612MDA980-4Single-Phase Full-Wave Bridge 12A 300V


32613MDA980-5Single-Phase Full-Wave Bridge 12A 400V
32614MDA980-6Single-Phase Full-Wave Bridge 12A 600V
32615MDA990-1Single-Phase Full-Wave Bridge 30A 50V
32616MDA990-2Single-Phase Full-Wave Bridge 30A 100V
32617MDA990-3Single-Phase Full-Wave Bridge 30A 200V
32618MDA990-4Single-Phase Full-Wave Bridge 30A 300V
32619MDA990-5Single-Phase Full-Wave Bridge 30A 400V
32620MDA990-6Single-Phase Full-Wave Bridge 30A 600V
32621MDC1000AMOSFET TURN OFF DEVICE
32622MDC1000ARLRMMOSFET TURN OFF DEVICE
32623MDC1000BLT1MOSFET TURN OFF DEVICE
32624MDC1000BLT3MOSFET TURN OFF DEVICE
32625MDC1000CT1MOSFET TURN OFF DEVICE
32626MDC1000CT3MOSFET TURN OFF DEVICE
32627MDC3105LT1RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK
32628MDC3205RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK
32629MDC5000T1SILICON SMALLBLOCK INTEGRATED CIRCUIT
32630MDC5001T1SILICON SMALLBLOCK INTEGRATED CIRCUIT
32631MDTL MC930 MC830 SERIESGeneral Information, functions and characteristics, packaging, truth tables, etc.
32632MDTL MCE930 SERIESDielectrically isolated integrated circuits, Radiation Hardness, DIONIC Structure, Nichrome Reistors, packaging, etc.
32633MECL IIMC1000/MC1200 series, functions and characteristics, logic diagrams, general information, packaging
32634MF122COMPLEMENTARY SILICON POWER DARLINGTONS
32635MF3304PNP silicon epitaxial transistor designed for low-level, high-speed switching applications
32636MFC4000P1/4-WATT Audio Amplifier
32637MFC4010PWide-Band Amplifier designed for AM/IF and low-level audio applications
32638MFC8000PDual Differential Amplifier (Stereo Input Amplifier)
32639MFC8001PDual Differential Amplifier (Stereo Input Amplifier)
32640MFC8002PDual Differential Amplifier (Stereo Input Amplifier)
32641MFE130N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET
32642MFE131N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET
32643MFE132N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET
32644MFE140MFE140
32645MFE2000Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications
32646MFE2001Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications
32647MFE2004Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32648MFE2005Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32649MFE2006Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32650MFE2007Silicon N-Channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32651MFE2008Silicon N-Channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32652MFE2009Silicon N-Channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32653MFE201(MFE201 ~ MFE203) Dual-Gate MOSFET
32654MFE2010Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32655MFE2011Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32656MFE2012Silicon N-channel depletion mode (Type A) junction field-effect transistor designed for chopper applications
32657MFE201XJFET Choppers
32658MFE2093Silicon N-channel junction field-effect transistor, drain and source interchangeable
32659MFE2094Silicon N-channel junction field-effect transistor, drain and source interchangeable
32660MFE2095Silicon N-channel junction field-effect transistor, drain and source interchangeable
32661MFE2097N-channel junction silicon field-effect transistor
32662MFE2098N-channel junction silicon field-effect transistor
32663MFE2133N-Channel junction silicon field-effect transistor designed for high-level chopper applications
32664MFE3001Silicon N-channel insulated-gate field-effect transistor designed for low-power applications in the audio frequency range
32665MFE3002Silicon N-channel MOS field-effect transistor designed for chopper applications
32666MFE3003Silicon P-channel MOS field-effect transistor designed for chopper applications
32667MFE3004Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications
32668MFE3005Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications
32669MFE3006N-channel dual-gate silicon-nitride passivated MOS field-effect transistor, depletion mode (Type B)
32670MFE3007N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications
32671MFE3008N-Channel Dual-Gate Silicon-Nitride Passivated MOS FET
32672MFE3020Dual P-Channel MOSFET
32673MFE3021Dual P-Channel MOSFET
32674MFE4007P-channel junction field-effect transistor, depletion mode (Type A)
32675MFE4008P-channel junction field-effect transistor, depletion mode (Type A)
32676MFE4009P-channel junction field-effect transistor, depletion mode (Type A)
32677MFE4010P-channel junction field-effect transistor, depletion mode (Type A)
32678MFE4011P-channel junction field-effect transistor, depletion mode (Type A)
32679MFE4012P-channel junction field-effect transistor, depletion mode (Type A)
32680MFE5000Silicon P-Channel Enhancement MOS Field Effect Quad Transistor
32681MFE590N-Channel Dual-Gate Silicon-Nitride Passivated DMOS FET
32682MFE591N-Channel Dual-Gate Silicon-Nitride Passivated DMOS FET
32683MFE823P-Channel MOSFET
32684MFE824N-Channel MOSFET
32685MFR9180RF Power Field Effect Transistors
32686MGP11N60EInsulated Gate Bipolar Transistor
32687MGP14N60EInsulated Gate Bipolar Transistor
32688MGP15N60UInsulated Gate Bipolar Transistor
32689MGP20N14CLInternally Clamped, N-Channel IGBT
32690MGP20N35CLSMARTDISCRETES Internally Clamped, N-Channel IGBT
32691MGP20N40CLSMARTDISCRETES Internally Clamped, N-Channel IGBT
32692MGP20N60UInsulated Gate Bipolar Transistor
32693MGP21N60EInsulated Gate Bipolar Transistor
32694MGP4N60EInsulated Gate Bipolar Transistor
32695MGP7N60EInsulated Gate Bipolar Transistor
32696MGR1018Power Manager Gallium Arsenide Power Rectifier
32697MGR2018CTPower Manager Gallium Arsenide Power Rectifier
32698MGR2025CTPower Manager Gallium Arsenide Power Rectifier
32699MGRB1018Power Manager Gallium Arsenide Power Rectifier
32700MGRB2018Power Manager Gallium Arsenide Power Rectifier


Page: | 1 | 10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 | 322 | 323 | 324 | 325 | 326 | 327 | 328 | 329 | 330 | 331 | 332 | 340 | 350 | 360 | 370 | 380 | 390 | 396 |


© 2024    www.datasheetcatalog.com/motorola/1/