| 113 | BCR10PM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 114 | BCR10PM | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 115 | BCR10UM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
| 116 | BCR12 | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
| 117 | BCR12CM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 118 | BCR12CM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 119 | BCR12CM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 120 | BCR12CS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 121 | BCR12CS-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 122 | BCR12CS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 123 | BCR12KM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 124 | BCR12PM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 125 | BCR12PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 126 | BCR12PM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 127 | BCR12PM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 128 | BCR12PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 129 | BCR12UM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
| 130 | BCR16A | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
| 131 | BCR16B | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
| 132 | BCR16C | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
| 133 | BCR16CM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 134 | BCR16CM | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 135 | BCR16CS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 136 | BCR16CS | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 137 | BCR16E | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
| 138 | BCR16HM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
| 139 | BCR16PM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 140 | BCR16PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 141 | BCR16PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 142 | BCR16UM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
| 143 | BCR1AM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 144 | BCR1AM-12 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
| 145 | BCR1AM-8 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
| 146 | BCR20A | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
| 147 | BCR20AM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 148 | BCR20AM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 149 | BCR20AM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 150 | BCR20B | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
| 151 | BCR20B-10 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 152 | BCR20B-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 153 | BCR20C | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
| 154 | BCR20C-10 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 155 | BCR20C-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 156 | BCR20E | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
| 157 | BCR20KM | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 158 | BCR25A | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
| 159 | BCR25B | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
| 160 | BCR2PM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 161 | BCR2PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 162 | BCR2PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 163 | BCR3 | LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
| 164 | BCR30 | MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
| 165 | BCR30AM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 166 | BCR30AM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 167 | BCR30AM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 168 | BCR30GM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
| 169 | BCR3AM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 170 | BCR3AS | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 171 | BCR3AS-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 172 | BCR3AS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 173 | BCR3KM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 174 | BCR3KM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 175 | BCR3KM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 176 | BCR3KM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 177 | BCR3KM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 178 | BCR3PM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 179 | BCR3PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 180 | BCR3PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 181 | BCR5 | MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
| 182 | BCR5AM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 183 | BCR5AM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 184 | BCR5AM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 185 | BCR5AS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 186 | BCR5AS-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 187 | BCR5AS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 188 | BCR5KM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 189 | BCR5KM | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 190 | BCR5PM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 191 | BCR5PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 192 | BCR5PM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 193 | BCR5PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 194 | BCR6 | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
| 195 | BCR6AM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 196 | BCR6AM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 197 | BCR6AM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| 198 | BCR8 | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
| 199 | BCR8CM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 200 | BCR8CM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
| | |
