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Hitachi Semiconductor

Datasheet Catalog - Page 62
Datasheets found :: 8475Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |
No.Part NameDescription
6101HM4816AP-316384-word by 1-bit Dynamic Random Access Memory
6102HM4816AP-3E16384-word by 1-bit Dynamic Random Access Memory
6103HM4816AP-416384-word by 1-bit Dynamic Random Access Memory
6104HM4816AP-716384-word by 1-bit Dynamic Random Access Memory
6105HM48416AP16384 word x 4 Bit Dynamic RAM
6106HM4864-265536-word x 1-bit Dynamic Random Access Memory
6107HM4864-365536-word x 1-bit Dynamic Random Access Memory
6108HM4864A-1265536-word x 1-bit Dynamic Random Access Memory
6109HM4864A-1565536-word x 1-bit Dynamic Random Access Memory
6110HM4864A-2065536-word x 1-bit Dynamic Random Access Memory
6111HM4864AP-1265536-word x 1-bit Dynamic Random Access Memory
6112HM4864AP-1565536-word x 1-bit Dynamic Random Access Memory


6113HM4864AP-2065536-word x 1-bit Dynamic Random Access Memory
6114HM4864P-265536-word x 1-bit Dynamic Random Access Memory
6115HM4864P-365536-word x 1-bit Dynamic Random Access Memory
6116HM5112805F-6128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
6117HM5112805FLTD-6128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
6118HM5112805FTD-6128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
6119HM5113805F-6128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
6120HM5113805FLTD-6128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
6121HM5113805FTD-6128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
6122HM511610016M FP DRAM (16-Mword x 1-bit) 4k Refresh
6123HM5116100S16M FP DRAM (16-Mword x 1-bit) 4k Refresh
6124HM5116100S-616M FP DRAM (16-Mword x 1-bit) 4k Refresh
6125HM5116100S-716M FP DRAM (16-Mword x 1-bit) 4k Refresh
6126HM51258P262144 word x 1 Bit Static Column CMOS DRAM
6127HM514100DLS-64,194,304-word x 1-bit dynamic RAM, 60ns
6128HM514100DLS-74,194,304-word x 1-bit dynamic RAM, 70ns
6129HM514100DLS-84,194,304-word x 1-bit dynamic RAM, 80ns
6130HM514100DS-64,194,304-word x 1-bit dynamic RAM, 60ns
6131HM514100DS-74,194,304-word x 1-bit dynamic RAM, 70ns
6132HM514100DS-84,194,304-word x 1-bit dynamic RAM, 80ns
6133HM514258AJP-10100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6134HM514258AJP-12120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6135HM514258AJP-660ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6136HM514258AJP-770ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6137HM514258AJP-880ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6138HM514258AP-10100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6139HM514258AP-12120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6140HM514258AP-660ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6141HM514258AP-770ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6142HM514258AP-880ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6143HM514258AZP-10100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6144HM514258AZP-12120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6145HM514258AZP-660ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6146HM514258AZP-770ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6147HM514258AZP-880ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
6148HM514260AJ-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory
6149HM514260AJ-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory
6150HM514260AJ-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory
6151HM514260ALJ-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory
6152HM514260ALJ-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory
6153HM514260ALJ-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory
6154HM514260ALRR-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory
6155HM514260ALRR-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory
6156HM514260ALRR-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory
6157HM514260ALTT-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory
6158HM514260ALTT-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory
6159HM514260ALTT-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory
6160HM514260ALZ-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory
6161HM514260ALZ-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory
6162HM514260ALZ-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory
6163HM514260ARR-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory
6164HM514260ARR-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory
6165HM514260ARR-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory
6166HM514260ATT-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory
6167HM514260ATT-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory
6168HM514260ATT-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory
6169HM514260AZ-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory
6170HM514260AZ-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory
6171HM514260AZ-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory
6172HM514260CJ-660ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory
6173HM514260CJ-6R60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory
6174HM514260CJ-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory
6175HM514260CJ-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory
6176HM514260CLJ-660ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory
6177HM514260CLJ-6R60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory
6178HM514260CLJ-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory
6179HM514260CLJ-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory
6180HM514260CLTT-670ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory
6181HM514260CLTT-6R70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory
6182HM514260CLTT-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory
6183HM514260CLTT-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory
6184HM514260CTT-660ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory
6185HM514260CTT-6R60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory
6186HM514260CTT-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory
6187HM514260CTT-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory
6188HM514260DJI-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory
6189HM514260DJI-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory
6190HM514260DLJI-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory
6191HM514260DLJI-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory
6192HM514260JP-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory
6193HM514260JP-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory
6194HM514260JP-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory
6195HM514260LJP-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory
6196HM514260LJP-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory
6197HM514260LJP-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory
6198HM514260LTT-10100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory
6199HM514260LTT-770ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory
6200HM514260LTT-880ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory


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