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General Electric Solid State

Datasheet Catalog - Page 7
Datasheets found :: 958Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No.Part NameDescription
3012N6703High-current silicon N-P-N VERSAWATT transistor.
3022N6704High-current silicon N-P-N VERSAWATT transistor.
3032N67515 A SwitchMax power transistor. High voltage N-P-N type.
3042N67525 A SwitchMax power transistor. High voltage N-P-N type.
3052N67535 A SwitchMax power transistor. High voltage N-P-N type.
3062N67545 A SwitchMax power transistor. High voltage N-P-N type.
3072N6755N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A.
3082N6756N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A.
3092N6757N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A.
3102N6758N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.
3112N6759N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.
3122N6760N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A.


3132N6761N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.
3142N6762N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.
3152N6764N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A.
3162N6766N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.
3172N6782N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.
3182N6788N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.
3192N6796N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V.
3202N68125A silicon controlled rectifier. Vrsom 35V.
3212N68225A silicon controlled rectifier. Vrsom 75V.
3222N68325A silicon controlled rectifier. Vrsom 150V.
3232N68425A silicon controlled rectifier. Vrsom 225V.
3242N68525A silicon controlled rectifier. Vrsom 300V.
3252N68625A silicon controlled rectifier. Vrsom 350V.
3262N68725A silicon controlled rectifier. Vrsom 400V.
3272N68825A silicon controlled rectifier. Vrsom 500V.
3282N68925A silicon controlled rectifier. Vrsom 600V.
3292N69025A silicon controlled rectifier. Vrsom 720V.
3302N69125A silicon controlled rectifier. Vrsom 840V.
3312N69225A silicon controlled rectifier. Vrsom 960V.
3322N697Silicon N-P-N planar transistor.
3333N128Silicon MOS Transistor
3343N142SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
3353N143Silicon MOS Transistor
3363N152Silicon MOS transistor.
3373N153SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
3383N154SILICON MOS TRANSISTOR
3393N187Silicon dual insulated-gate field-effect transistor.
3403N200Silicon dual insulated-gate field-effect transistor.
3413N204Silicon dual insulated-gate field-effect transistor.
3423N205Silicon dual insulated-gate field-effect transistor.
3433N206Silicon dual insulated-gate field-effect transistor.
34440346Medium-power silicon N-P-N planar transistor.
34540347Silicon N-P-N transistor. 60V, 8.75W.
34640348Silicon N-P-N transistor. 90V, 8.75W.
34740406Silicon P-N-P power transistor. -50V.
34840407Silicon N-P-N power transistor. 50V.
34940408Silicon N-P-N power transistor. 90V.
35040411Silicon N-P-N power transistor. 90V (Rbe 100Ohm).


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