W4NXD8C-S000 datasheet
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W4NXD8C-S000 manufactured by:
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Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Others with the same file for datasheet: W4NRD0X-0000, W4NRD8C-U000, W4NXD8C-0000, W4NXD8D-S000, W4NXD8G-0000 |
Download W4NXD8C-S000 datasheet from CREE POWER |
pdf 277 kb |
| W4NXD8C-L000 | View W4NXD8C-S000 to our catalog | W4NXD8D-0000 |