PB-IRF6609 datasheet
PB-IRF6609 manufactured by:
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Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. | Download PB-IRF6609 datasheet from International Rectifier |
pdf 268 kb |
PB-IRF640NS | View PB-IRF6609 to our catalog | PB-IRF6610 |