| 13 | C450-CB290-E1000 | 3.5mW; color:deep blue; 3.3-3.7V; super bright InGaN LED |
| 14 | C460-CB230-E1000 | 1.3W; color:deep blue; 3.7V; low current InGaN LED |
| 15 | C460-CB290-E1000 | 3.0mW; color:deep blue; 3.3-3.7V; super bright InGaN LED |
| 16 | C460-MB290-E1000 | 11.0mW; color:deep blue; 3.7-4.0V; mega bright InGaN LED |
| 17 | C460-UB290-E1000 | 5.5mW; color:deep blue; 3.5-3.9V; ultra bright InGaN LED |
| 18 | C460-UB291-E1000 | 5.5mW; color:deep blue; 3.5-3.9V; ultra bright InGaN LED |
| 19 | C460-XB290-E1000-A | 15.0mW; color:deep blue; 3.7-4.0V; Xbright InGaN LED |
| 20 | C460-XB290-E1000-B | 14.0mW; color:blue; 3.7-4.0V; Xbright InGaN LED |
| 21 | C470-CB230-E1000 | 1.3W; color:deep blue; 3.7V; low current InGaN LED |
| 22 | C470-CB290-E1000 | 2.5mW; color:blue; 3.3-3.7V; super bright InGaN LED |
| 23 | C470-MB290-E1000 | 10.0mW; color:blue; 3.7-4.0V; mega bright InGaN LED |
| 24 | C470-UB290-E1000 | 5.0mW; color:blue; 3.5-3.9V; ultra bright InGaN LED |
| 25 | C470-UB291-E1000 | 5.0mW; color:blue; 3.5-3.9V; ultra bright InGaN LED |
| 26 | C470-XB290-E1000-A | 14.0mW; color:blue; 3.7-4.0V; Xbright InGaN LED |
| 27 | C470-XB290-E1000-B | 14.0mW; color:blue; 3.7-4.0V; Xbright InGaN LED |
| 28 | C470-XB900-A | 150mW; color:blue; 3.7-4.0V; Xbright InGaN LED |
| 29 | C470-XB900-B | 150mW; color:blue; 3.7-4.0V; Xbright InGaN LED |
| 30 | C490-CB290-E1000 | 2.5mW; color:aqua blue; 3.3-3.7V; super bright InGaN LED |
| 31 | C490-UB290-E1000 | 4.8mW; color:aqua blue; 3.5-3.9V; ultra bright InGaN LED |
| 32 | C503-MB290-E1000 | 8.0mW; color:green; 3.7-4.0V; mega bright InGaN LED |
| 33 | C505-CB290-E1000 | 2.0mW; color:green; 3.3-3.7V; super bright InGaN LED |
| 34 | C505-MB290-E1000 | 8.0mW; color:green; 3.7-4.0V; mega bright InGaN LED |
| 35 | C505-UB290-E1000 | 3.5mW; color:green; 3.5-3.9V; ultra bright InGaN LED |
| 36 | C505-XB290-E1000-A | 11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
| 37 | C505-XB290-E1000-B | 11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
| 38 | C525-CB230-E1000 | 0.650W; color:green; 3.7V; low current InGaN LED |
| 39 | C525-CB290-E1000 | 1.5mW; color:green; 3.3-3.7V; super bright InGaN LED |
| 40 | C525-UB290-E1000 | 3.0mW; color:green; 3.5-3.9V; ultra bright InGaN LED |
| 41 | C527-MB290-E1000 | 7.0mW; color:green; 3.7-4.0V; mega bright InGaN LED |
| 42 | C527-XB290-E1000-A | 9.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
| 43 | C527-XB290-E1000-B | 9.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
| 44 | CRF-22010-001 | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
| 45 | CRF-22010-101 | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
| 46 | CRF-22010-TB | 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband) |
| 47 | CSD01060A | 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 48 | CSD01060E | 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 49 | CSD04060A | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 50 | CSD04060B | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 51 | CSD04060E | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 52 | CSD05120A | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, high voltage multipliers |
| 53 | CSD06060A | 600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 54 | CSD06060B | 600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 55 | CSD06060G | 600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 56 | CSD10060A | 600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 57 | CSD10060B | 600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 58 | CSD10060G | 600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 59 | CSD10120D | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| 60 | CSD20060D | 600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber |
| 61 | CXXX-CB230-E1000 | 5V; 125mA; super bright LED. For communication handsets, backlighting, high resolution video displays |
| 62 | CXXX-CB290-S0100 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| 63 | CXXX-MB290-E1000 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| 64 | CXXX-MB290-S0100 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| 65 | CXXX-UB290-S1000 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| 66 | CXXX-UB29X-S0100 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| 67 | W4NRD0X-0000 | Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 68 | W4NRD8C-U000 | Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 69 | W4NXD8C-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 70 | W4NXD8C-L000 | Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 71 | W4NXD8C-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 72 | W4NXD8D-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 73 | W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 74 | W4NXD8G-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 75 | W6NRD0X-0000 | Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 76 | W6NRE0X-0000 | Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 77 | W6NXD0K-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 78 | W6NXD0KLSR-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 79 | W6NXD3J-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 80 | W6NXD3K-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 81 | W6NXD3L-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| 82 | W6PXD3O-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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