| 89881 | 2N5545TXV | Monolithic MilitaryGeneral Purpose | Vishay |
| 89882 | 2N5546 | N-Channel JFET | Allegro MicroSystems |
| 89883 | 2N5546 | N-Channel Junction FET (Field-Effect Transistor) | Motorola |
| 89884 | 2N5546 | N-Channel JFET | National Semiconductor |
| 89885 | 2N5546JAN | Monolithic MilitaryGeneral Purpose | Vishay |
| 89886 | 2N5546JANTX | Monolithic N-Channel JFET Duals | Vishay |
| 89887 | 2N5546JANTXV | Monolithic N-Channel JFET Duals | Vishay |
| 89888 | 2N5546TX | Monolithic MilitaryGeneral Purpose | Vishay |
| 89889 | 2N5546TXV | Monolithic MilitaryGeneral Purpose | Vishay |
| 89890 | 2N5547 | N-Channel Junction FET (Field-Effect Transistor) | Motorola |
| 89891 | 2N5547JAN | Monolithic MilitaryGeneral Purpose | Vishay |
| 89892 | 2N5547JANTX | Monolithic N-Channel JFET Duals | Vishay |
| 89893 | 2N5547JANTXV | Monolithic N-Channel JFET Duals | Vishay |
| 89894 | 2N5547TX | Monolithic MilitaryGeneral Purpose | Vishay |
| 89895 | 2N5547TXV | Monolithic MilitaryGeneral Purpose | Vishay |
| 89896 | 2N5548 | P-Channel MOS FET (Field-Effect Transistor) | Motorola |
| 89897 | 2N5549 | N-Channel Junction FET (Field-Effect Transistor) | Motorola |
| 89898 | 2N555 | PNP germanium power transistor for non-critical applications requiring economical components | Motorola |
| 89899 | 2N555 | Germanium PNP Transistor | Motorola |
|
| 89900 | 2N5550 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89901 | 2N5550 | 0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE | Continental Device India Limited |
| 89902 | 2N5550 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 89903 | 2N5550 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 89904 | 2N5550 | High Voltage Transistor | Korea Electronics (KEC) |
| 89905 | 2N5550 | TO-92 Plastic-Encapsulate Biploar Transistors | Micro Commercial Components |
| 89906 | 2N5550 | SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS | Micro Electronics |
| 89907 | 2N5550 | Amplifier Transistors | Motorola |
| 89908 | 2N5550 | Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box | New Jersey Semiconductor |
| 89909 | 2N5550 | Small Signal Amplifier NPN | ON Semiconductor |
| 89910 | 2N5550 | NPN high-voltage transistors | Philips |
| 89911 | 2N5550 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 89912 | 2N5550 | NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications | Semtech |
| 89913 | 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 89914 | 2N5550-D | Amplifier Transistors NPN Silicon | ON Semiconductor |
| 89915 | 2N5550BU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 89916 | 2N5550RLRA | Small Signal Amplifier NPN | ON Semiconductor |
| 89917 | 2N5550RLRP | Small Signal Amplifier NPN | ON Semiconductor |
| 89918 | 2N5550S | High Voltage Transistor | Korea Electronics (KEC) |
| 89919 | 2N5550TA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 89920 | 2N5550TAR | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
