| 86441 | 2N6594 | Silicon PNP Power Transistors TO-3 package | Savantic |
| 86442 | 2N66 | PNP Transistor | Motorola |
| 86443 | 2N660 | SCRs | Central Semiconductor |
| 86444 | 2N660 | Germanium PNP Transistor | Motorola |
| 86445 | 2N660 | Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 86446 | 2N6605 | Leaded Thyristor SCR | Central Semiconductor |
| 86447 | 2N6606 | Leaded Thyristor SCR | Central Semiconductor |
| 86448 | 2N6607 | Leaded Thyristor SCR | Central Semiconductor |
| 86449 | 2N6608 | Leaded Thyristor SCR | Central Semiconductor |
| 86450 | 2N6609 | COMPLEMENTARY SILICON POWER TRANSISTORS | Boca Semiconductor Corporation |
| 86451 | 2N6609 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 86452 | 2N6609 | Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. | General Electric Solid State |
| 86453 | 2N6609 | POWER TRANSISTORS(16A,140V,150W) | MOSPEC Semiconductor |
| 86454 | 2N6609 | Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 86455 | 2N6609 | Power 16A 140V Discrete PNP | ON Semiconductor |
| 86456 | 2N661 | Germanium PNP Transistor | Motorola |
| 86457 | 2N661 | Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 86458 | 2N6619 | 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application | Siemens |
| 86459 | 2N662 | Germanium PNP Transistor | Motorola |
|
| 86460 | 2N662 | Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 86461 | 2N6620 | NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER | Siemens |
| 86462 | 2N6621 | 25 V, 25 mA, NPN silicon RF broadband transistor | Siemens |
| 86463 | 2N663 | Germanium PNP Transistor | Motorola |
| 86464 | 2N6648 | Leaded Power Transistor Darlington | Central Semiconductor |
| 86465 | 2N6648 | 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 86466 | 2N6648 | PNP Darlington Transistor | Microsemi |
| 86467 | 2N6648 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 86468 | 2N6648 | Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 86469 | 2N6648E3 | Darlington Transistors | Microsemi |
| 86470 | 2N6649 | Leaded Power Transistor Darlington | Central Semiconductor |
| 86471 | 2N6649 | 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 86472 | 2N6649 | PNP Darlington Transistor | Microsemi |
| 86473 | 2N6649 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 86474 | 2N6649 | Trans Darlington PNP 60V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 86475 | 2N6649E3 | BJT( BiPolar Junction Transistor) | Microsemi |
| 86476 | 2N665 | PNP germanium power transistor in military and industrial equipment | Motorola |
| 86477 | 2N665 | Germanium PNP Transistor | Motorola |
| 86478 | 2N6650 | Leaded Power Transistor Darlington | Central Semiconductor |
| 86479 | 2N6650 | 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 86480 | 2N6650 | PNP Darlington Transistor | Microsemi |
