| 84921 | 2N385A | Germanium NPN Transistor | Motorola |
| 84922 | 2N386 | Germanium PNP Transistor | Motorola |
| 84923 | 2N3860 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 84924 | 2N3860 | Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. | General Electric Solid State |
| 84925 | 2N3860 | Silicon NPN Transistor | Motorola |
| 84926 | 2N3860 | Chip: 4.5V; geometry 0003; polarity NPN | Semicoa Semiconductor |
| 84927 | 2N3861 | Silicon NPN Transistor | Motorola |
| 84928 | 2N3862 | Silicon NPN Transistor | Motorola |
| 84929 | 2N3862 | Silicon Planar Epitaxial Logic NPN Transistor | Transitron Electronic |
| 84930 | 2N3863 | Silicon NPN Transistor | Motorola |
| 84931 | 2N3864 | Silicon NPN Transistor | Motorola |
| 84932 | 2N3865 | Silicon NPN Transistor | Motorola |
| 84933 | 2N3866 | NPN SILICON HIGH FREQUENCY TRANSISTOR | Advanced Semiconductor |
| 84934 | 2N3866 | Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages | AEG-TELEFUNKEN |
| 84935 | 2N3866 | High Frequency NPN transistor | CCSIT-CE |
| 84936 | 2N3866 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 84937 | 2N3866 | High frequency NPN transistor | FERRANTI |
| 84938 | 2N3866 | Silicon NPN overlay epitaxial planar RF transistor | ICCE |
| 84939 | 2N3866 | Transmitting transistor NPN | mble |
|
| 84940 | 2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
| 84941 | 2N3866 | NPN silicon high frequency transistor 1.0W - 400MHz | Motorola |
| 84942 | 2N3866 | NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment | Motorola |
| 84943 | 2N3866 | Silicon NPN Transistor | Motorola |
| 84944 | 2N3866 | R.F. power transistor | Mullard |
| 84945 | 2N3866 | Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 | New Jersey Semiconductor |
| 84946 | 2N3866 | Silicon planar epitaxial overlay transistors | Philips |
| 84947 | 2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 84948 | 2N3866 | Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications | SGS-ATES |
| 84949 | 2N3866 | Transistor for high frequency amplifiers | SGS-ATES |
| 84950 | 2N3866 | RF transistor | Texas Instruments |
| 84951 | 2N3866A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
| 84952 | 2N3866A | NPN silicon high frequency transistor 1.0W - 400MHz | Motorola |
| 84953 | 2N3866A | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 84954 | 2N3866AF | Chip: geometry 1007; polarity NPN | Semicoa Semiconductor |
| 84955 | 2N3866AUB | NPN Transistor | Microsemi |
| 84956 | 2N3866AUB | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 84957 | 2N3866UB | NPN Transistor | Microsemi |
| 84958 | 2N3867 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 84959 | 2N3867 | 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. | Continental Device India Limited |
| 84960 | 2N3867 | PNP Transistor | Microsemi |
