84881 | 2N6027 | Thyristor PUT 40V 5A 3-Pin TO-92 | New Jersey Semiconductor |
84882 | 2N6027 | Programmable Unijunction Transistor | ON Semiconductor |
84883 | 2N6027 | Silicon programmable unijunction transistor, 40V, 150mA | Planeta |
84884 | 2N6027-D | Programmable Unijunction Transistor | ON Semiconductor |
84885 | 2N6027RL1 | Programmable Unijunction Transistor | ON Semiconductor |
84886 | 2N6027RLRA | Programmable Unijunction Transistor | ON Semiconductor |
84887 | 2N6028 | Leaded Thyristor UJT | Central Semiconductor |
84888 | 2N6028 | Programmable unijunction transistor. | General Electric Solid State |
84889 | 2N6028 | Thyristor PUT 40V 5A 3-Pin TO-92 | New Jersey Semiconductor |
84890 | 2N6028 | Programmable UJT | ON Semiconductor |
84891 | 2N6028 | Silicon programmable unijunction transistor, 40V, 150mA | Planeta |
84892 | 2N6028RLRA | Programmable UJT | ON Semiconductor |
84893 | 2N6028RLRM | Programmable UJT | ON Semiconductor |
84894 | 2N6028RLRP | Programmable UJT | ON Semiconductor |
84895 | 2N6029 | COMPLEMENTARY SILICON POWER TRANSISTORS | Central Semiconductor |
84896 | 2N6029 | Trans GP BJT PNP 100V 16A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
84897 | 2N6029 | Silicon PNP Power Transistors TO-3 package | Savantic |
84898 | 2N603 | Germanium PNP Transistor | Motorola |
84899 | 2N6030 | COMPLEMENTARY SILICON POWER TRANSISTORS | Central Semiconductor |
|
84900 | 2N6030 | Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits | Motorola |
84901 | 2N6030 | Trans GP BJT PNP 120V 16A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
84902 | 2N6030 | Silicon PNP Power Transistors TO-3 package | Savantic |
84903 | 2N6031 | Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits | Motorola |
84904 | 2N6031 | Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
84905 | 2N6031 | High-Voltage High-Power Transistors | ON Semiconductor |
84906 | 2N6031 | Silicon PNP Power Transistors TO-3 package | Savantic |
84907 | 2N6032 | High-current, high-power, high-speed silicon N-P-N transistor. | General Electric Solid State |
84908 | 2N6032 | NPN Transistor | Microsemi |
84909 | 2N6033 | High-current, high-power, high-speed silicon N-P-N transistor. | General Electric Solid State |
84910 | 2N6033 | NPN Transistor | Microsemi |
84911 | 2N6033 | Bipolar NPN Device | SemeLAB |
84912 | 2N6034 | Leaded Power Transistor Darlington | Central Semiconductor |
84913 | 2N6034 | W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. | Continental Device India Limited |
84914 | 2N6034 | Trans Darlington PNP 40V 4A 3-Pin TO-126 Box | New Jersey Semiconductor |
84915 | 2N6034 | Silicon PNP Power Transistors TO-126 package | Savantic |
84916 | 2N6034 | PNP medium power darlington transistor, 4A , 40V | SGS Thomson Microelectronics |
84917 | 2N6034 | MIDIUM POWER DAR;OMGTONS | ST Microelectronics |
84918 | 2N6034B | Trans Darlington PNP 40V 4A 3-Pin TO-126 Box | New Jersey Semiconductor |
84919 | 2N6035 | Leaded Power Transistor Darlington | Central Semiconductor |
84920 | 2N6035 | Trans Darlington PNP 60V 4A 3-Pin TO-126 Box | New Jersey Semiconductor |