| 83041 | 2N5204 | Thyristor SCR 600V 355A 3-Pin TO-48 | New Jersey Semiconductor |
| 83042 | 2N5205 | 800V 22A Phase Control SCR in a TO-208AA (TO-48) package | International Rectifier |
| 83043 | 2N5205 | 25 and 35 Amp RMS SCRs | Knox Semiconductor Inc |
| 83044 | 2N5205 | THYRISTOR | Motorola |
| 83045 | 2N5205 | Thyristor SCR 1KV 150A 3-Pin TO-48 | New Jersey Semiconductor |
| 83046 | 2N5206 | 1000V 22A Phase Control SCR in a TO-208AA (TO-48) package | International Rectifier |
| 83047 | 2N5206 | 25 and 35 Amp RMS SCRs | Knox Semiconductor Inc |
| 83048 | 2N5206 | Silicon Power Thyristor | Microsemi |
| 83049 | 2N5206 | THYRISTOR | Motorola |
| 83050 | 2N5206 | Thyristor SCR 1KV 150A 3-Pin TO-48 | New Jersey Semiconductor |
| 83051 | 2N5206e3 | Silicon Power Thyristor | Microsemi |
| 83052 | 2N5207 | 1200V 22A Phase Control SCR in a TO-208AA (TO-48) package | International Rectifier |
| 83053 | 2N5207 | 25 and 35 Amp RMS SCRs | Knox Semiconductor Inc |
| 83054 | 2N5207 | THYRISTOR | Motorola |
| 83055 | 2N5207 | Thyristor SCR 1KV 150A 3-Pin TO-48 | New Jersey Semiconductor |
| 83056 | 2N5208 | PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz | Motorola |
| 83057 | 2N5208 | Silicon PNP Transistor | Motorola |
| 83058 | 2N5208 | CASE 29-04,STYLE 2 TO-92(TO-226AA) | Motorola |
| 83059 | 2N5209 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
|
| 83060 | 2N5209 | NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS | Micro Electronics |
| 83061 | 2N5209 | NPN silicon annular transistor | Motorola |
| 83062 | 2N5209 | Silicon NPN Transistor | Motorola |
| 83063 | 2N5209 | Amplifier Transistors(NPN Silicon) | ON Semiconductor |
| 83064 | 2N5209-D | Amplifier Transistors NPN Silicon | ON Semiconductor |
| 83065 | 2N5209RLRE | Amplifier Transistor NPN | ON Semiconductor |
| 83066 | 2N520A | Germanium PNP Transistor | Motorola |
| 83067 | 2N521 | Germanium PNP Transistor | Motorola |
| 83068 | 2N5210 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 83069 | 2N5210 | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 83070 | 2N5210 | NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS | Micro Electronics |
| 83071 | 2N5210 | NPN silicon annular transistor | Motorola |
| 83072 | 2N5210 | Silicon NPN Transistor | Motorola |
| 83073 | 2N5210 | Amplifier Transistors(NPN Silicon) | ON Semiconductor |
| 83074 | 2N5210 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 83075 | 2N5210 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 83076 | 2N5210BU | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 83077 | 2N5210NMBU | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 83078 | 2N5210RLRA | Amplifier Transistor NPN | ON Semiconductor |
| 83079 | 2N5210TA | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 83080 | 2N5210TAR | NPN General Purpose Amplifier | Fairchild Semiconductor |
