| 811441 | KM416V4104CS-L60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung Electronic |
| 811442 | KM4170 | Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers | Fairchild Semiconductor |
| 811443 | KM4170IS5TR3 | Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O Amplifiers | Fairchild Semiconductor |
| 811444 | KM4170IT5TR3 | Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O Amplifiers | Fairchild Semiconductor |
| 811445 | KM418RD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811446 | KM418RD16AC | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811447 | KM418RD16AD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811448 | KM418RD16C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811449 | KM418RD16D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811450 | KM418RD2AC | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811451 | KM418RD2AD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811452 | KM418RD2C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811453 | KM418RD2D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811454 | KM418RD32AC | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811455 | KM418RD32AD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811456 | KM418RD32C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811457 | KM418RD32D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811458 | KM418RD4AC | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811459 | KM418RD4AD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
|
| 811460 | KM418RD4C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811461 | KM418RD4D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811462 | KM418RD8AC | 128/144Mbit RDRAM | Samsung Electronic |
| 811463 | KM418RD8AC(D)-RG60 | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811464 | KM418RD8AC(D)-RK70 | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811465 | KM418RD8AC(D)-RK80 | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811466 | KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung Electronic |
| 811467 | KM418RD8AC-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung Electronic |
| 811468 | KM418RD8AC-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic |
| 811469 | KM418RD8AD | 128/144Mbit RDRAM | Samsung Electronic |
| 811470 | KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung Electronic |
| 811471 | KM418RD8AD-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung Electronic |
| 811472 | KM418RD8AD-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic |
| 811473 | KM418RD8C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811474 | KM418RD8D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 811475 | KM41C4000D | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 811476 | KM41C4000DJ-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns | Samsung Electronic |
| 811477 | KM41C4000DJ-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns | Samsung Electronic |
| 811478 | KM41C4000DJ-7 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns | Samsung Electronic |
| 811479 | KM41C4000DLJ-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns | Samsung Electronic |
| 811480 | KM41C4000DLJ-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns | Samsung Electronic |
